High Speed Semiconductor Physics. Theoretical Approaches and Device Physics
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Lieferung aus: Deutschland, Versandkostenfrei.
High Speed Semiconductor Physics. Theoretical Approaches and Device Physics: Solid state physics is a fascinating sub-genre of condensed matter physics - though some graduate students consider it a very boring and tedious subject area in Physics and others even call it a "e squalid state"e . Topics covered in this book are built on standard solid state physics references available in most online libraries or in other books on solid state physics. The complexity of high speed semiconductor physics and related devices arose from condensed solid state matter. The content covered in this book gives a deep coverage on some topics or sections that may be covered only superficially in other literature. Therefore, these topics are likely to differ a great deal from what is deemed important elsewhere in other books or available literature. There are many extremely good books on solid-state physics and condensed matter physics but very few of these books are restricted to high speed semiconductor physic though. Chapter one covers the general semiconductor qualities that make high speed semiconductor devices effect and includes the theory of crystals, diffusion and ist mechanisms, while chapter two covers solid state materials, material processing for high speed semiconductor devices and an introduction to quantum theory for materials in relation to density of states of the radiation for a black body and ist radiation properties. Chapter three discuss high speed semiconductor energy band theory, energy bands in general solid semiconductor materials, the Debye model, the Einstein model the Debye model and semiconductor transport carriers in 3D semiconductors while chapter four discuss effect of external force on current flow based on the concept of holes valence band, and lattice scattering in high speed devices. Chapter five briefly describes solid state thermoelectric fundamentals, thermoelectric material and thermoelectric theory of solids in lattice and phonons while chapter six scattering in high field effect in semiconductors in inter-valley electron scattering and the associated Fermi Dirac statistics and Maxwell-Boltzmann approximation on their carrier concentration variation with energy in extrinsic doping chapter seven covers p-n junction diodes, varactor diode, pin diode Schottky diode and their transient response of diode in multi-valley semiconductors. Chapter eight discusses high speed metal semiconductor field effect transistors. Englisch, Ebook.

Lieferung aus: Deutschland, Versandkostenfrei.
High Speed Semiconductor Physics. Theoretical Approaches and Device Physics: Solid state physics is a fascinating sub-genre of condensed matter physics - though some graduate students consider it a very boring and tedious subject area in Physics and others even call it a `squalid state`. Topics covered in this book are built on standard solid state physics references available in most online libraries or in other books on solid state physics. The complexity of high speed semiconductor physics and related devices arose from condensed solid state matter. The content covered in this book gives a deep coverage on some topics or sections that may be covered only superficially in other literature. Therefore, these topics are likely to differ a great deal from what is deemed important elsewhere in other books or available literature. There are many extremely good books on solid-state physics and condensed matter physics but very few of these books are restricted to high speed semiconductor physic though. Chapter one covers the general semiconductor qualities that make high speed semiconductor devices effect and includes the theory of crystals, diffusion and ist mechanisms, while chapter two covers solid state materials, material processing for high speed semiconductor devices and an introduction to quantum theory for materials in relation to density of states of the radiation for a black body and ist radiation properties. Chapter three discuss high speed semiconductor energy band theory, energy bands in general solid semiconductor materials, the Debye model, the Einstein model the Debye model and semiconductor transport carriers in 3D semiconductors while chapter four discuss effect of external force on current flow based on the concept of holes valence band, and lattice scattering in high speed devices. Chapter five briefly describes solid state thermoelectric fundamentals, thermoelectric material and thermoelectric theory of solids in lattice and phonons while chapter six scattering in high field effect in semiconductors in inter-valley electron scattering and the associated Fermi Dirac statistics and Maxwell-Boltzmann approximation on their carrier concentration variation with energy in extrinsic doping chapter seven covers p-n junction diodes, varactor diode, pin diode Schottky diode and their transient response of diode in multi-valley semiconductors. Chapter eight discusses high speed metal semiconductor field effect transistors. Englisch, Ebook.

Lieferung aus: Deutschland, E-Book zum Download.
Solid state physics is a fascinating sub-genre of condensed matter physics - though some graduate students consider it a very boring and tedious subject area in Physics and others even call it a squalid state. Topics covered in this book are built on standard solid state physics references available in most online libraries or in other books on solid state physics. The complexity of high speed semiconductor physics and related devices arose from condensed solid state matter. The content covered in this book gives a deep coverage on some topics or sections that may be covered only superficially in other literature. Therefore, these topics are likely to differ a great deal from what is deemed important elsewhere in other books or available literature. There are many extremely good books on solid-state physics and condensed matter physics but very few of these books are restricted to high speed semiconductor physic though. Chapter one covers the general semiconductor qualities that make high speed semiconductor devices effect and includes the theory of crystals, diffusion and ist mechanisms, while chapter two covers solid state materials, material processing for high speed semiconductor devices and an introduction to quantum theory for materials in relation to density of states of the radiation for a black body and ist radiation properties. Chapter three discuss high speed semiconductor energy band theory, energy bands in general solid semiconductor materials, the Debye model, the Einstein model the Debye model and semiconductor transport carriers in 3D semiconductors while chapter four discuss effect of external force on current flow based on the concept of holes valence band, and lattice scattering in high speed devices. Chapter five briefly describes solid state thermoelectric fundamentals, thermoelectric material and thermoelectric theory of solids in lattice and phonons while chapter six scattering in high field effect in semiconductors in inter-valley electron scattering and the associated Fermi Dirac statistics and Maxwell-Boltzmann approximation on their carrier concentration variation with energy in extrinsic doping chapter seven covers p-n junction diodes, varactor diode, pin diode Schottky diode and their transient response of diode in multi-valley semiconductors. Chapter eight discusses high speed metal semiconductor field effect transistors. Cliff Orori Mosiori was born in Bong'onta Location, Kisii County, Kenya in 17 May 1973, to Kisii parents, Mr and Mrs. Mosiori Maigo Ontiri and Ebisiba Nyaboke Mosiorigrew up at Bong'onta Sub-location, Kisii County and currently lives in Nakuru town, Nakuru County from 2005. For eleven years he taught at St. Pauls Nyacheki high school in Nyamache District, Kisii county and later at Menengai Hill Secondary School, Nakuru North district before joining Rift Valley Institute of Science and Technology (RVIST) as a senior lecturer in Electronics and Elctronic Engineering. He also serves as a visiting lecturer to Kenyatta University at the Department of Physics, Nairobi and Masinde Muliro University of Science and Technology, Kakamega County, Kenya. His first book entitled,Characterization of CdZn and PbS thin films for Photovoltaics, was first published in 2013 by Lambart Academic Publishing, Germany. In 2014, he published other books entitled as follows Electrical and Optical Characterization of Cdxzn1-XS and PBS Thin Films for Photovoltaic Applications; Digital Electronics; Optical Coating; Physics of Thermal Phenomena; Thin Film Device Physics For Solar Cell Applications: The Basics of Solar Cells; with Lambart Academic Publishing, Germany. An Insight Into Teacher Education Program in Kenya Before the Devolved Government Structure and Fabrication of a Solar Cell from Thin Films Using Solution Techinique with Grinn Academic Publiching Company. In 2015, he has also published a book with Anchor Academic Publishing Company in Germany entitled Inorganic Ternary Thin films Anaysis of Optical Properties and he is currently about to submitt another book on thin films. He is specialised in Solid State Physics specifically materials for thin films fabrication, analysis and characterization for optical devices and a consultant in thin films materials for solar energy.

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