Mobility and Impact Ionization in Silicon at High Temperature
2 Angebote vergleichen
Bester Preis: € 64,00 (vom 08.05.2018)1
Mobility and Impact Ionization in Silicon at High Temperature (2007)
EN PB NW FEISBN: 9783866281363 bzw. 3866281366, in Englisch, 210 Seiten, Hartung-Gorre, Taschenbuch, neu, Erstausgabe.
Lieferung aus: Deutschland, Versandfertig in 1 - 2 Werktagen, Versandkostenfrei. Tatsächliche Versandkosten können abweichen.
Von Händler/Antiquariat, hartung_gorre_verlag.
This work presents an investigation of mobility and impact ionization in silicon at high temperature. Proper device architectures and materials have been developed and novel technology solutions for wire bonding and packaging have been used for extending the temperature range. The test structure design and the extraction of the physical parameters have been assisted by two and three-dimensional TCAD simulations. The mobility has been measured by the Hall technique up to 1000 K thanks to the use of Ti/TiN interconnections in combination with junction-free van der Pauw resistors. A new extraction methodology has been proposed to account for the reduced Hall voltage in lightly doped silicon due to the conduction of minority carriers. The hole and the electron impact ionization coefficients have been determined as a function of the electrical field up to 673 K and 613 K, respectively, by measurements of the multiplication factor in bipolar and static induction transistors. Taschenbuch, Ausgabe: 1., Aufl. Label: Hartung-Gorre, Hartung-Gorre, Produktgruppe: Book, Publiziert: 2007-06-22, Studio: Hartung-Gorre, Verkaufsrang: 2480562.
Von Händler/Antiquariat, hartung_gorre_verlag.
This work presents an investigation of mobility and impact ionization in silicon at high temperature. Proper device architectures and materials have been developed and novel technology solutions for wire bonding and packaging have been used for extending the temperature range. The test structure design and the extraction of the physical parameters have been assisted by two and three-dimensional TCAD simulations. The mobility has been measured by the Hall technique up to 1000 K thanks to the use of Ti/TiN interconnections in combination with junction-free van der Pauw resistors. A new extraction methodology has been proposed to account for the reduced Hall voltage in lightly doped silicon due to the conduction of minority carriers. The hole and the electron impact ionization coefficients have been determined as a function of the electrical field up to 673 K and 613 K, respectively, by measurements of the multiplication factor in bipolar and static induction transistors. Taschenbuch, Ausgabe: 1., Aufl. Label: Hartung-Gorre, Hartung-Gorre, Produktgruppe: Book, Publiziert: 2007-06-22, Studio: Hartung-Gorre, Verkaufsrang: 2480562.
2
Mobility and Impact Ionization in Silicon at High Temperature (2007)
EN PB NW FEISBN: 9783866281363 bzw. 3866281366, in Englisch, 210 Seiten, Hartung-Gorre, Taschenbuch, neu, Erstausgabe.
Lieferung aus: Deutschland, Versandfertig in 1 - 2 Werktagen, Versandkostenfrei. Tatsächliche Versandkosten können abweichen.
Von Händler/Antiquariat, hartung_gorre_verlag.
This work presents an investigation of mobility and impact ionization in silicon at high temperature. Proper device architectures and materials have been developed and novel technology solutions for wire bonding and packaging have been used for extending the temperature range. The test structure design and the extraction of the physical parameters have been assisted by two and three-dimensional TCAD simulations. The mobility has been measured by the Hall technique up to 1000 K thanks to the use of Ti/TiN interconnections in combination with junction-free van der Pauw resistors. A new extraction methodology has been proposed to account for the reduced Hall voltage in lightly doped silicon due to the conduction of minority carriers. The hole and the electron impact ionization coefficients have been determined as a function of the electrical field up to 673 K and 613 K, respectively, by measurements of the multiplication factor in bipolar and static induction transistors. Taschenbuch, Ausgabe: 1., Aufl. Label: Hartung-Gorre, Hartung-Gorre, Produktgruppe: Book, Publiziert: 2007-06-22, Studio: Hartung-Gorre, Verkaufsrang: 3014384.
Von Händler/Antiquariat, hartung_gorre_verlag.
This work presents an investigation of mobility and impact ionization in silicon at high temperature. Proper device architectures and materials have been developed and novel technology solutions for wire bonding and packaging have been used for extending the temperature range. The test structure design and the extraction of the physical parameters have been assisted by two and three-dimensional TCAD simulations. The mobility has been measured by the Hall technique up to 1000 K thanks to the use of Ti/TiN interconnections in combination with junction-free van der Pauw resistors. A new extraction methodology has been proposed to account for the reduced Hall voltage in lightly doped silicon due to the conduction of minority carriers. The hole and the electron impact ionization coefficients have been determined as a function of the electrical field up to 673 K and 613 K, respectively, by measurements of the multiplication factor in bipolar and static induction transistors. Taschenbuch, Ausgabe: 1., Aufl. Label: Hartung-Gorre, Hartung-Gorre, Produktgruppe: Book, Publiziert: 2007-06-22, Studio: Hartung-Gorre, Verkaufsrang: 3014384.
Lade…