Complex ESD Protection Elements and Issues in Decananometre CMOS Technologies
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Complex ESD Protection Elements and Issues in Decananometre CMOS Technologies (2007)
EN PB NW FEISBN: 9783866281356 bzw. 3866281358, in Englisch, 180 Seiten, Hartung-Gorre, Taschenbuch, neu, Erstausgabe.
Lieferung aus: Deutschland, Versandfertig in 1 - 2 Werktagen, Versandkostenfrei. Tatsächliche Versandkosten können abweichen.
Von Händler/Antiquariat, hartung_gorre_verlag.
This work comprises several investigations into complex electrostatic discharge (ESD) protection elements and issues in decananometre p-substrate CMOS technologies. Calibrated TCAD device simulation constitutes the mainly used tool. Special attention is given to parasitic and inherent devices. A relevant failure mode, the opening of a critical ESD path via parasitic npn transistors is analysed. Several solutions on the device and circuit level are developed. Two essential ESD protection devices, p+/n-well diode strings and thyristors (SCRs) are studied. The discovery of parasitic SCRs necessitates the extension of the equivalent circuit model of the diode string. Three dimensional ESD simulations of an SCR ESD protection device exhibit current confinement. The rigorous analysis of the transient response of both protection devices leads to their optimisation regarding speed and clamping capabilities. Keywords: Complex ESD Protection Elements, Decananometre CMOS Technologies, Taschenbuch, Ausgabe: 1., Ed. Label: Hartung-Gorre, Hartung-Gorre, Produktgruppe: Book, Publiziert: 2007-07-31, Studio: Hartung-Gorre, Verkaufsrang: 4194910.
Von Händler/Antiquariat, hartung_gorre_verlag.
This work comprises several investigations into complex electrostatic discharge (ESD) protection elements and issues in decananometre p-substrate CMOS technologies. Calibrated TCAD device simulation constitutes the mainly used tool. Special attention is given to parasitic and inherent devices. A relevant failure mode, the opening of a critical ESD path via parasitic npn transistors is analysed. Several solutions on the device and circuit level are developed. Two essential ESD protection devices, p+/n-well diode strings and thyristors (SCRs) are studied. The discovery of parasitic SCRs necessitates the extension of the equivalent circuit model of the diode string. Three dimensional ESD simulations of an SCR ESD protection device exhibit current confinement. The rigorous analysis of the transient response of both protection devices leads to their optimisation regarding speed and clamping capabilities. Keywords: Complex ESD Protection Elements, Decananometre CMOS Technologies, Taschenbuch, Ausgabe: 1., Ed. Label: Hartung-Gorre, Hartung-Gorre, Produktgruppe: Book, Publiziert: 2007-07-31, Studio: Hartung-Gorre, Verkaufsrang: 4194910.
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Complex ESD Protection Elements and Issues in Decananometre CMOS Technologies (2007)
EN PB NW FEISBN: 9783866281356 bzw. 3866281358, in Englisch, 180 Seiten, Hartung-Gorre, Taschenbuch, neu, Erstausgabe.
Lieferung aus: Deutschland, Versandfertig in 1 - 2 Werktagen, Versandkostenfrei. Tatsächliche Versandkosten können abweichen.
Von Händler/Antiquariat, hartung_gorre_verlag.
This work comprises several investigations into complex electrostatic discharge (ESD) protection elements and issues in decananometre p-substrate CMOS technologies. Calibrated TCAD device simulation constitutes the mainly used tool. Special attention is given to parasitic and inherent devices. A relevant failure mode, the opening of a critical ESD path via parasitic npn transistors is analysed. Several solutions on the device and circuit level are developed. Two essential ESD protection devices, p+/n-well diode strings and thyristors (SCRs) are studied. The discovery of parasitic SCRs necessitates the extension of the equivalent circuit model of the diode string. Three dimensional ESD simulations of an SCR ESD protection device exhibit current confinement. The rigorous analysis of the transient response of both protection devices leads to their optimisation regarding speed and clamping capabilities. Keywords: Complex ESD Protection Elements, Decananometre CMOS Technologies, Taschenbuch, Ausgabe: 1., Ed. Label: Hartung-Gorre, Hartung-Gorre, Produktgruppe: Book, Publiziert: 2007-07-31, Studio: Hartung-Gorre, Verkaufsrang: 4537855.
Von Händler/Antiquariat, hartung_gorre_verlag.
This work comprises several investigations into complex electrostatic discharge (ESD) protection elements and issues in decananometre p-substrate CMOS technologies. Calibrated TCAD device simulation constitutes the mainly used tool. Special attention is given to parasitic and inherent devices. A relevant failure mode, the opening of a critical ESD path via parasitic npn transistors is analysed. Several solutions on the device and circuit level are developed. Two essential ESD protection devices, p+/n-well diode strings and thyristors (SCRs) are studied. The discovery of parasitic SCRs necessitates the extension of the equivalent circuit model of the diode string. Three dimensional ESD simulations of an SCR ESD protection device exhibit current confinement. The rigorous analysis of the transient response of both protection devices leads to their optimisation regarding speed and clamping capabilities. Keywords: Complex ESD Protection Elements, Decananometre CMOS Technologies, Taschenbuch, Ausgabe: 1., Ed. Label: Hartung-Gorre, Hartung-Gorre, Produktgruppe: Book, Publiziert: 2007-07-31, Studio: Hartung-Gorre, Verkaufsrang: 4537855.
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