Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices
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Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices (2006)
EN PB NW FEISBN: 9783866280878 bzw. 3866280874, in Englisch, 134 Seiten, Hartung-Gorre, Taschenbuch, neu, Erstausgabe.
Lieferung aus: Deutschland, Versandfertig in 1 - 2 Werktagen, Versandkostenfrei. Tatsächliche Versandkosten können abweichen.
Von Händler/Antiquariat, hartung_gorre_verlag.
Based on simulations with the device simulator DESSIS_ISE, this work investigates implications of quantization on the modeling of three kinds of transport effects in MOS devices. The first part deals with the question to what extend tunneling currents through insulating barriers can be described within the quantum drift-diffusion model. The second part introduces and investigates a consistent way of modeling Shockley-Read-Hall recombination in the presence of quantization. The third part describes a model for the drift mobility in MOS channels. Special emphasis is put on the influence of remote Coulomb scattering by impurities in the polysilicon gate electrode. Keywords: semiconductor device modeling, quantum transport, tunneling effect, Shockley-Read-Hall recombination, drift mobility, density gradient model, recombination lifetime, remote Coulomb scattering, ultrathin gate oxide, quantum confinement, quantum effects, MOS diode, MOSFET, quantum drift-diffusion model, resonant tunneling, negative differential resistance, quantum well, inversion layer mobility. Taschenbuch, Ausgabe: 1., Aufl. Label: Hartung-Gorre, Hartung-Gorre, Produktgruppe: Book, Publiziert: 2006-10-10, Studio: Hartung-Gorre, Verkaufsrang: 4194359.
Von Händler/Antiquariat, hartung_gorre_verlag.
Based on simulations with the device simulator DESSIS_ISE, this work investigates implications of quantization on the modeling of three kinds of transport effects in MOS devices. The first part deals with the question to what extend tunneling currents through insulating barriers can be described within the quantum drift-diffusion model. The second part introduces and investigates a consistent way of modeling Shockley-Read-Hall recombination in the presence of quantization. The third part describes a model for the drift mobility in MOS channels. Special emphasis is put on the influence of remote Coulomb scattering by impurities in the polysilicon gate electrode. Keywords: semiconductor device modeling, quantum transport, tunneling effect, Shockley-Read-Hall recombination, drift mobility, density gradient model, recombination lifetime, remote Coulomb scattering, ultrathin gate oxide, quantum confinement, quantum effects, MOS diode, MOSFET, quantum drift-diffusion model, resonant tunneling, negative differential resistance, quantum well, inversion layer mobility. Taschenbuch, Ausgabe: 1., Aufl. Label: Hartung-Gorre, Hartung-Gorre, Produktgruppe: Book, Publiziert: 2006-10-10, Studio: Hartung-Gorre, Verkaufsrang: 4194359.
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Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices (2006)
EN PB NW FEISBN: 9783866280878 bzw. 3866280874, in Englisch, 134 Seiten, Hartung-Gorre, Taschenbuch, neu, Erstausgabe.
Lieferung aus: Deutschland, Versandfertig in 1 - 2 Werktagen, Versandkostenfrei. Tatsächliche Versandkosten können abweichen.
Von Händler/Antiquariat, hartung_gorre_verlag.
Based on simulations with the device simulator DESSIS_ISE, this work investigates implications of quantization on the modeling of three kinds of transport effects in MOS devices. The first part deals with the question to what extend tunneling currents through insulating barriers can be described within the quantum drift-diffusion model. The second part introduces and investigates a consistent way of modeling Shockley-Read-Hall recombination in the presence of quantization. The third part describes a model for the drift mobility in MOS channels. Special emphasis is put on the influence of remote Coulomb scattering by impurities in the polysilicon gate electrode. Keywords: semiconductor device modeling, quantum transport, tunneling effect, Shockley-Read-Hall recombination, drift mobility, density gradient model, recombination lifetime, remote Coulomb scattering, ultrathin gate oxide, quantum confinement, quantum effects, MOS diode, MOSFET, quantum drift-diffusion model, resonant tunneling, negative differential resistance, quantum well, inversion layer mobility. Taschenbuch, Ausgabe: 1., Aufl. Label: Hartung-Gorre, Hartung-Gorre, Produktgruppe: Book, Publiziert: 2006-10-10, Studio: Hartung-Gorre, Verkaufsrang: 4537530.
Von Händler/Antiquariat, hartung_gorre_verlag.
Based on simulations with the device simulator DESSIS_ISE, this work investigates implications of quantization on the modeling of three kinds of transport effects in MOS devices. The first part deals with the question to what extend tunneling currents through insulating barriers can be described within the quantum drift-diffusion model. The second part introduces and investigates a consistent way of modeling Shockley-Read-Hall recombination in the presence of quantization. The third part describes a model for the drift mobility in MOS channels. Special emphasis is put on the influence of remote Coulomb scattering by impurities in the polysilicon gate electrode. Keywords: semiconductor device modeling, quantum transport, tunneling effect, Shockley-Read-Hall recombination, drift mobility, density gradient model, recombination lifetime, remote Coulomb scattering, ultrathin gate oxide, quantum confinement, quantum effects, MOS diode, MOSFET, quantum drift-diffusion model, resonant tunneling, negative differential resistance, quantum well, inversion layer mobility. Taschenbuch, Ausgabe: 1., Aufl. Label: Hartung-Gorre, Hartung-Gorre, Produktgruppe: Book, Publiziert: 2006-10-10, Studio: Hartung-Gorre, Verkaufsrang: 4537530.
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