Charged Device Model (CDM) ESD in ICs: Physics, Modeling, and Circuit Simulation (Series in Microelectronics)
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Charged Device Model (CDM) ESD in ICs: Physics, Modeling, and Circuit Simulation (2006)
EN PB NW FEISBN: 9783866280670 bzw. 386628067X, in Englisch, 234 Seiten, Hartung-Gorre, Taschenbuch, neu, Erstausgabe.
Lieferung aus: Deutschland, Versandfertig in 1 - 2 Werktagen, Versandkostenfrei. Tatsächliche Versandkosten können abweichen.
Von Händler/Antiquariat, hartung_gorre_verlag.
CDM ESD events are an increasingly important reliability problem for the microelectronics industry. In order to deal with this issue in the future, the capability to predict and optimize the robustness of integrated circuits for CDM ESD events is essential. This thesis investigates physical effects that influence the device behavior in the current and time domain of CDM ESD events. Modeling approaches are introduced for CDM specific device physical effects and parasitic elements in the IC and the CDM measurement setup. A parameter extraction method is presented that can be applied to determine the transient high-current parameters of devices under CDM conditions. The influence of parasitic elements of the IC and the measurement setup on the CDM behavior is studied. Based on these results, a CDM circuit simulation method is proposed. The capability of this method to predict CDM robustness of integrated circuits and to determine weak circuit elements is demonstrated in two case studies. Taschenbuch, Ausgabe: 1., Aufl. Label: Hartung-Gorre, Hartung-Gorre, Produktgruppe: Book, Publiziert: 2006-06-20, Studio: Hartung-Gorre, Verkaufsrang: 2494258.
Von Händler/Antiquariat, hartung_gorre_verlag.
CDM ESD events are an increasingly important reliability problem for the microelectronics industry. In order to deal with this issue in the future, the capability to predict and optimize the robustness of integrated circuits for CDM ESD events is essential. This thesis investigates physical effects that influence the device behavior in the current and time domain of CDM ESD events. Modeling approaches are introduced for CDM specific device physical effects and parasitic elements in the IC and the CDM measurement setup. A parameter extraction method is presented that can be applied to determine the transient high-current parameters of devices under CDM conditions. The influence of parasitic elements of the IC and the measurement setup on the CDM behavior is studied. Based on these results, a CDM circuit simulation method is proposed. The capability of this method to predict CDM robustness of integrated circuits and to determine weak circuit elements is demonstrated in two case studies. Taschenbuch, Ausgabe: 1., Aufl. Label: Hartung-Gorre, Hartung-Gorre, Produktgruppe: Book, Publiziert: 2006-06-20, Studio: Hartung-Gorre, Verkaufsrang: 2494258.
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Charged Device Model (CDM) ESD in ICs: Physics, Modeling, and Circuit Simulation (Series in Microelectronics) (2006)
EN PB NW FEISBN: 9783866280670 bzw. 386628067X, in Englisch, 234 Seiten, Hartung-Gorre, Taschenbuch, neu, Erstausgabe.
Lieferung aus: Deutschland, Versandfertig in 1 - 2 Werktagen, Versandkostenfrei. Tatsächliche Versandkosten können abweichen.
Von Händler/Antiquariat, hartung_gorre_verlag.
CDM ESD events are an increasingly important reliability problem for the microelectronics industry. In order to deal with this issue in the future, the capability to predict and optimize the robustness of integrated circuits for CDM ESD events is essential. This thesis investigates physical effects that influence the device behavior in the current and time domain of CDM ESD events. Modeling approaches are introduced for CDM specific device physical effects and parasitic elements in the IC and the CDM measurement setup. A parameter extraction method is presented that can be applied to determine the transient high-current parameters of devices under CDM conditions. The influence of parasitic elements of the IC and the measurement setup on the CDM behavior is studied. Based on these results, a CDM circuit simulation method is proposed. The capability of this method to predict CDM robustness of integrated circuits and to determine weak circuit elements is demonstrated in two case studies. Taschenbuch, Ausgabe: 1., Label: Hartung-Gorre, Hartung-Gorre, Produktgruppe: Book, Publiziert: 2006-06-20, Studio: Hartung-Gorre, Verkaufsrang: 3019383.
Von Händler/Antiquariat, hartung_gorre_verlag.
CDM ESD events are an increasingly important reliability problem for the microelectronics industry. In order to deal with this issue in the future, the capability to predict and optimize the robustness of integrated circuits for CDM ESD events is essential. This thesis investigates physical effects that influence the device behavior in the current and time domain of CDM ESD events. Modeling approaches are introduced for CDM specific device physical effects and parasitic elements in the IC and the CDM measurement setup. A parameter extraction method is presented that can be applied to determine the transient high-current parameters of devices under CDM conditions. The influence of parasitic elements of the IC and the measurement setup on the CDM behavior is studied. Based on these results, a CDM circuit simulation method is proposed. The capability of this method to predict CDM robustness of integrated circuits and to determine weak circuit elements is demonstrated in two case studies. Taschenbuch, Ausgabe: 1., Label: Hartung-Gorre, Hartung-Gorre, Produktgruppe: Book, Publiziert: 2006-06-20, Studio: Hartung-Gorre, Verkaufsrang: 3019383.
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