Fluorine enriched silicon: properties and advantages: Interaction between point defects, fluorine and boron atoms in crystalline silicon
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| Preise | 2013 | 2014 | 2015 |
|---|---|---|---|
| Schnitt | € 54,17 | € 56,63 | € 72,73 |
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1
Fluorine Enriched Silicon: Properties and Advantages
DE PB NWISBN: 9783843374088 bzw. 3843374082, in Deutsch, LAP LAMBERT Academic Publishing, Taschenbuch, neu.
Von Händler/Antiquariat, BuySomeBooks [52360437], Las Vegas, NV, U.S.A.
Paperback. 120 pages. Dimensions: 8.7in. x 5.9in. x 0.3in.Si-based microelectronic community is experiencing a sort of revolution, in order to meet the scaling rate demanded by high-tech industries. Shallow p-type junctions with high active dopant concentrations are needed. The F capability in helping the B confinement in Si is widely recognized, even if there is not a general consensus on the physical mechanisms acting. Different mechanisms have been proposed: a chemical bonding between F and B; or a F interaction with point defects, through the formation of F-I (interstitial) or F-V (vacancy) complexes. This thesis investigates the F behaviour in pre-amorphized Si, opening a new route towards the F profile engineering. F is shown to strongly modify Is and Vs population, inducing an Is undersaturation or a Vs supersaturation. Such effect is transient, because strictly correlated to the transient presence of F in the Si samples. Our results allow a point defect engineering by means of F, ruling out the F-B chemical bonding as the responsible for B diffusion reduction by F, and suggesting the F-V bonding as the key mechanism governing the F behaviour in pre-amorphized Si and its capability in controlling the point defect population. This item ships from multiple locations. Your book may arrive from Roseburg,OR, La Vergne,TN.
Paperback. 120 pages. Dimensions: 8.7in. x 5.9in. x 0.3in.Si-based microelectronic community is experiencing a sort of revolution, in order to meet the scaling rate demanded by high-tech industries. Shallow p-type junctions with high active dopant concentrations are needed. The F capability in helping the B confinement in Si is widely recognized, even if there is not a general consensus on the physical mechanisms acting. Different mechanisms have been proposed: a chemical bonding between F and B; or a F interaction with point defects, through the formation of F-I (interstitial) or F-V (vacancy) complexes. This thesis investigates the F behaviour in pre-amorphized Si, opening a new route towards the F profile engineering. F is shown to strongly modify Is and Vs population, inducing an Is undersaturation or a Vs supersaturation. Such effect is transient, because strictly correlated to the transient presence of F in the Si samples. Our results allow a point defect engineering by means of F, ruling out the F-B chemical bonding as the responsible for B diffusion reduction by F, and suggesting the F-V bonding as the key mechanism governing the F behaviour in pre-amorphized Si and its capability in controlling the point defect population. This item ships from multiple locations. Your book may arrive from Roseburg,OR, La Vergne,TN.
2
Fluorine enriched silicon: properties and advantages (2010)
DE PB NW RPISBN: 9783843374088 bzw. 3843374082, in Deutsch, Lap Lambert Acad. Publ. Nov 2010, Taschenbuch, neu, Nachdruck.
Von Händler/Antiquariat, AHA-BUCH GmbH [51283250], Einbeck, Germany.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
3
Fluorine Enriched Silicon: Properties and Advantages (2014)
DE PB NWISBN: 9783843374088 bzw. 3843374082, in Deutsch, LAP LAMBERT ACADEMIC PUB 01/12/2014, Taschenbuch, neu.
Von Händler/Antiquariat, Books2Anywhere [190245], Fairford, United Kingdom.
New Book. Shipped from UK. This item is printed on demand.
New Book. Shipped from UK. This item is printed on demand.
4
Fluorine Enriched Silicon: Properties and Advantages (2014)
DE PB NWISBN: 9783843374088 bzw. 3843374082, in Deutsch, LAP LAMBERT ACADEMIC PUB 01/07/2014, Taschenbuch, neu.
Von Händler/Antiquariat, Books2Anywhere [190245], Fairford, GLO, United Kingdom.
New Book. This item is printed on demand. Shipped from UK. This item is printed on demand.
New Book. This item is printed on demand. Shipped from UK. This item is printed on demand.
5
Fluorine enriched silicon: properties and advantages: Interaction between point defects, fluorine and boron atoms in crystalline silicon
DE PB NWISBN: 9783843374088 bzw. 3843374082, in Deutsch, LAP LAMBERT Academic Publishing, Taschenbuch, neu.
Von Händler/Antiquariat, ExtremelyReliable [8304062], RICHMOND, TX, U.S.A.
This item is printed on demand.
This item is printed on demand.
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