Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.
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Bester Preis: € 79,00 (vom 01.09.2018)1
Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.
DE PB NWISBN: 9783839613450 bzw. 3839613450, in Deutsch, Fraunhofer Verlag, Taschenbuch, neu.
Lieferung aus: Deutschland, Versandkosten nach: Deutschland, Versandkostenfrei.
Von Händler/Antiquariat, buecher.de GmbH & Co. KG, [1].
Heavily doped silicon is required for devices such as PowerMOSFETs. For the devices to be as sufficient as possible it is necessary to lower the electrical resistivity of the silicon substrate as low as possible. Yet, during the growth of heavily n-type doped silicon by the Czochralski method dislocation formation occurs frequently, reducing yield. Thus this work covers the topics intrinsic point defects, electrical activity of dopant atoms, spreading of dislocations and facet growth. Each topic is discussed in regard of their possible impact on the formation of the dislocations. In doing so, the control of facet growth is found to be most crucial to prevent the formation of the dislocations. 2018. 204 S. 14 Farbabb. 210 mm Versandfertig in 3-5 Tagen, Softcover, Neuware, offene Rechnung (Vorkasse vorbehalten).
Von Händler/Antiquariat, buecher.de GmbH & Co. KG, [1].
Heavily doped silicon is required for devices such as PowerMOSFETs. For the devices to be as sufficient as possible it is necessary to lower the electrical resistivity of the silicon substrate as low as possible. Yet, during the growth of heavily n-type doped silicon by the Czochralski method dislocation formation occurs frequently, reducing yield. Thus this work covers the topics intrinsic point defects, electrical activity of dopant atoms, spreading of dislocations and facet growth. Each topic is discussed in regard of their possible impact on the formation of the dislocations. In doing so, the control of facet growth is found to be most crucial to prevent the formation of the dislocations. 2018. 204 S. 14 Farbabb. 210 mm Versandfertig in 3-5 Tagen, Softcover, Neuware, offene Rechnung (Vorkasse vorbehalten).
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Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method. (2018)
DE NW RPISBN: 9783839613450 bzw. 3839613450, in Deutsch, Fraunhofer Verlag, neu, Nachdruck.
Von Händler/Antiquariat, Pbshop [61989342], Wood Dale, IL, U.S.A.
New Book. Shipped from US within 10 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
New Book. Shipped from US within 10 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
3
Symbolbild
Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method. (2018)
DE NW RPISBN: 9783839613450 bzw. 3839613450, in Deutsch, Fraunhofer Verlag, neu, Nachdruck.
Von Händler/Antiquariat, Books2Anywhere [190245], Fairford, GLOS, United Kingdom.
New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
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Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.
DE PB NWISBN: 9783839613450 bzw. 3839613450, in Deutsch, Fraunhofer Verlag, Taschenbuch, neu.
Lieferung aus: Vereinigte Staaten von Amerika, Lagernd, zzgl. Versandkosten.
Heavily-n-type-doped-silicon-and-the-dislocation-formation-during-its-growth-by-the-Czochralski-method~~Ludwig-Stockmeier, Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method. Paperback.
Heavily-n-type-doped-silicon-and-the-dislocation-formation-during-its-growth-by-the-Czochralski-method~~Ludwig-Stockmeier, Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method. Paperback.
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Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method. (2018)
EN PB NWISBN: 9783839613450 bzw. 3839613450, in Englisch, 204 Seiten, Fraunhofer Verlag, Taschenbuch, neu.
Lieferung aus: Deutschland, Gewöhnlich versandfertig in 24 Stunden, Versandkostenfrei.
Von Händler/Antiquariat, Amazon.de.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Von Händler/Antiquariat, Amazon.de.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
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