Investigation of p-i-n GaAs structures by DLTS method: The Deep Level Transient Spectroscopy in application to GaAs p-i-n structures for identification of deep levels
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Investigation of P-I-N GAAS Structures by Dlts Method
DE PB NWISBN: 9783838392233 bzw. 383839223X, in Deutsch, LAP LAMBERT Academic Publishing, Taschenbuch, neu.
Von Händler/Antiquariat, BuySomeBooks [52360437], Las Vegas, NV, U.S.A.
Paperback. 148 pages. Dimensions: 8.6in. x 6.0in. x 0.4in.The DLTS (Deep Level Transient Sprctroscopy) method is used for measuring of deep levels in p-n structures, Schottky diodes, etc. The p-i-n diodes are complicated multi layer structures, containing wide i-layer and two junctions: n-i and p-i. As a result, the diode consist of two series capacities. Applied voltage is focused on i-layer and weakly modulates the space charge area in n- and p- layers. The source (technological layer) that is responsible for DLTS signal can be hardly recognized, and therefore it is difficult to estimate the concentration of deep levels and determine the origin of these defects. The main goal of the work is the interpretation of measured DLTS spectra on commercial GaAs p-p-i-n-n structures to indentify the deep level centers and their properties in p-i-n region. This item ships from multiple locations. Your book may arrive from Roseburg,OR, La Vergne,TN.
Paperback. 148 pages. Dimensions: 8.6in. x 6.0in. x 0.4in.The DLTS (Deep Level Transient Sprctroscopy) method is used for measuring of deep levels in p-n structures, Schottky diodes, etc. The p-i-n diodes are complicated multi layer structures, containing wide i-layer and two junctions: n-i and p-i. As a result, the diode consist of two series capacities. Applied voltage is focused on i-layer and weakly modulates the space charge area in n- and p- layers. The source (technological layer) that is responsible for DLTS signal can be hardly recognized, and therefore it is difficult to estimate the concentration of deep levels and determine the origin of these defects. The main goal of the work is the interpretation of measured DLTS spectra on commercial GaAs p-p-i-n-n structures to indentify the deep level centers and their properties in p-i-n region. This item ships from multiple locations. Your book may arrive from Roseburg,OR, La Vergne,TN.
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Investigation of p-i-n GaAs structures by DLTS method (2010)
DE PB NW RPISBN: 9783838392233 bzw. 383839223X, in Deutsch, Lap Lambert Acad. Publ. Aug 2010, Taschenbuch, neu, Nachdruck.
Von Händler/Antiquariat, AHA-BUCH GmbH [51283250], Einbeck, NDS, Germany.
This item is printed on demand - Print on Demand Titel. - The DLTS (Deep Level Transient Sprctroscopy) method is used for measuring of deep levels in p-n structures, Schottky diodes, etc. The p-i-n diodes are complicated multi layer structures, containing wide i-layer and two junctions: n-i and p-i. As a result, the diode consist of two series capacities. Applied voltage is focused on i-layer and weakly modulates the space charge area in n- and p- layers. The 'source' (technological layer) that is responsible for DLTS signal can be hardly recognized, and therefore it is difficult to estimate the concentration of deep levels and determine the origin of these defects. The main goal of the work is the interpretation of measured DLTS spectra on commercial GaAs p+-p-i-n-n+ structures to indentify the deep level centers and their properties in p-i-n region. 148 pp. Englisch.
This item is printed on demand - Print on Demand Titel. - The DLTS (Deep Level Transient Sprctroscopy) method is used for measuring of deep levels in p-n structures, Schottky diodes, etc. The p-i-n diodes are complicated multi layer structures, containing wide i-layer and two junctions: n-i and p-i. As a result, the diode consist of two series capacities. Applied voltage is focused on i-layer and weakly modulates the space charge area in n- and p- layers. The 'source' (technological layer) that is responsible for DLTS signal can be hardly recognized, and therefore it is difficult to estimate the concentration of deep levels and determine the origin of these defects. The main goal of the work is the interpretation of measured DLTS spectra on commercial GaAs p+-p-i-n-n+ structures to indentify the deep level centers and their properties in p-i-n region. 148 pp. Englisch.
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Investigation of P-I-N GAAS Structures by Dlts Method (Paperback) (2010)
DE PB NW RPISBN: 9783838392233 bzw. 383839223X, in Deutsch, LAP Lambert Academic Publishing, Germany, Taschenbuch, neu, Nachdruck.
Von Händler/Antiquariat, The Book Depository EURO [60485773], London, United Kingdom.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
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Investigation of p-i-n GaAs structures by DLTS method
DE NWISBN: 9783838392233 bzw. 383839223X, in Deutsch, neu.
Lieferung aus: Deutschland, zzgl. Versandkosten, Sofort lieferbar.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
5
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Investigation of P-I-N GAAS Structures by Dlts Method (2015)
DE PB NWISBN: 9783838392233 bzw. 383839223X, in Deutsch, LAP LAMBERT ACADEMIC PUB 01/04/2015, Taschenbuch, neu.
Von Händler/Antiquariat, Books2Anywhere [190245], Swindon, United Kingdom.
New Book. Shipped from UK in 4 to 14 days. Established seller since 2000. This item is printed on demand.
New Book. Shipped from UK in 4 to 14 days. Established seller since 2000. This item is printed on demand.
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