MBE Growth and Characterization of SiGe Nanoislands
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MBE Growth and Characterization of Sige Nanoislands (2015)
DE NW
ISBN: 9783659820397 bzw. 3659820393, in Deutsch, LAP Lambert Academic Publishing, neu.
Von Händler/Antiquariat, Books2Anywhere [190245], Fairford, GLOS, United Kingdom.
New Book. Delivered from our UK warehouse in 3 to 5 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
New Book. Delivered from our UK warehouse in 3 to 5 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
2
MBE Growth and Characterization of SiGe Nanoislands
DE NW
ISBN: 9783659820397 bzw. 3659820393, in Deutsch, neu.
Lieferung aus: Deutschland, zzgl. Versandkosten.
SiGe nanoislands have been grown by Molecular Beam Epitaxy (MBE) on Si (100) substrates with various layer designs and growth conditions. Multilayered thin films of these structures with different thicknesses were fabricated by changing the substrate temperature, Ge content, annealing temperature and annealing duration. Structural properties of the surfaces were examined by Reflection High Energy Electron Diffraction (RHEED), Grazing Angle X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). The optical investigation was acquired by Dispersive Raman Spectroscopy and the electrical characterization was performed by Semiconductor Analysis method. It has been observed that the surface morphology of the nanostructures can be tuned by changing their layer designs and growth parameters.
SiGe nanoislands have been grown by Molecular Beam Epitaxy (MBE) on Si (100) substrates with various layer designs and growth conditions. Multilayered thin films of these structures with different thicknesses were fabricated by changing the substrate temperature, Ge content, annealing temperature and annealing duration. Structural properties of the surfaces were examined by Reflection High Energy Electron Diffraction (RHEED), Grazing Angle X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). The optical investigation was acquired by Dispersive Raman Spectroscopy and the electrical characterization was performed by Semiconductor Analysis method. It has been observed that the surface morphology of the nanostructures can be tuned by changing their layer designs and growth parameters.
3
MBE Growth and Characterization of SiGe Nanoislands
~EN NW AB
ISBN: 9783659820397 bzw. 3659820393, vermutlich in Englisch, neu, Hörbuch.
Lieferung aus: Niederlande, Lieferzeit: 5 Tage, zzgl. Versandkosten.
SiGe nanoislands have been grown by Molecular Beam Epitaxy (MBE) on Si (100) substrates with various layer designs and growth conditions. Multilayered thin films of these structures with different thicknesses were fabricated by changing the substrate temperature, Ge content, annealing temperature and annealing duration. Structural properties of the surfaces were examined by Reflection High Energy Electron Diffraction (RHEED), Grazing Angle X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). The optical investigation was acquired by Dispersive Raman Spectroscopy and the electrical characterization was performed by Semiconductor Analysis method. It has been observed that the surface morphology of the nanostructures can be tuned by changing their layer designs and growth parameters.
SiGe nanoislands have been grown by Molecular Beam Epitaxy (MBE) on Si (100) substrates with various layer designs and growth conditions. Multilayered thin films of these structures with different thicknesses were fabricated by changing the substrate temperature, Ge content, annealing temperature and annealing duration. Structural properties of the surfaces were examined by Reflection High Energy Electron Diffraction (RHEED), Grazing Angle X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). The optical investigation was acquired by Dispersive Raman Spectroscopy and the electrical characterization was performed by Semiconductor Analysis method. It has been observed that the surface morphology of the nanostructures can be tuned by changing their layer designs and growth parameters.
4
MBE Growth and Characterization of SiGe Nanoislands
~EN PB NW
ISBN: 9783659820397 bzw. 3659820393, vermutlich in Englisch, LAP Lambert Academic Publishing, Taschenbuch, neu.
Lieferung aus: Deutschland, Versandkostenfrei.
MBE Growth and Characterization of SiGe Nanoislands: SiGe nanoislands have been grown by Molecular Beam Epitaxy (MBE) on Si (100) substrates with various layer designs and growth conditions. Multilayered thin films of these structures with different thicknesses were fabricated by changing the substrate temperature, Ge content, annealing temperature and annealing duration. Structural properties of the surfaces were examined by Reflection High Energy Electron Diffraction (RHEED), Grazing Angle X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). The optical investigation was acquired by Dispersive Raman Spectroscopy and the electrical characterization was performed by Semiconductor Analysis method. It has been observed that the surface morphology of the nanostructures can be tuned by changing their layer designs and growth parameters. Englisch, Taschenbuch.
MBE Growth and Characterization of SiGe Nanoislands: SiGe nanoislands have been grown by Molecular Beam Epitaxy (MBE) on Si (100) substrates with various layer designs and growth conditions. Multilayered thin films of these structures with different thicknesses were fabricated by changing the substrate temperature, Ge content, annealing temperature and annealing duration. Structural properties of the surfaces were examined by Reflection High Energy Electron Diffraction (RHEED), Grazing Angle X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). The optical investigation was acquired by Dispersive Raman Spectroscopy and the electrical characterization was performed by Semiconductor Analysis method. It has been observed that the surface morphology of the nanostructures can be tuned by changing their layer designs and growth parameters. Englisch, Taschenbuch.
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MBE Growth and Characterization of SiGe Nanoislands (2016)
DE PB NW RP
ISBN: 9783659820397 bzw. 3659820393, in Deutsch, LAP Lambert Academic Publishing Jan 2016, Taschenbuch, neu, Nachdruck.
Lieferung aus: Deutschland, Versandkostenfrei.
Von Händler/Antiquariat, AHA-BUCH GmbH [51283250], Einbeck, Germany.
This item is printed on demand - Print on Demand Neuware - 124 pp. Englisch.
Von Händler/Antiquariat, AHA-BUCH GmbH [51283250], Einbeck, Germany.
This item is printed on demand - Print on Demand Neuware - 124 pp. Englisch.
6
Symbolbild
MBE Growth and Characterization of SiGe Nanoislands (2015)
DE PB NW RP
ISBN: 9783659820397 bzw. 3659820393, in Deutsch, LAP Lambert Academic Publishing, Taschenbuch, neu, Nachdruck.
Lieferung aus: Deutschland, Versandkostenfrei.
Von Händler/Antiquariat, English-Book-Service Mannheim [1048135], Mannheim, Germany.
This item is printed on demand for shipment within 3 working days.
Von Händler/Antiquariat, English-Book-Service Mannheim [1048135], Mannheim, Germany.
This item is printed on demand for shipment within 3 working days.
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