Design of Capacitorless Memory Cell Based on Gan Heterostructures (Paperback)
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Design of Capacitorless Memory Cell based on GaN Heterostructures
DE PB NW RPISBN: 9783659105562 bzw. 3659105562, in Deutsch, Taschenbuch, neu, Nachdruck.
Von Händler/Antiquariat, AHA-BUCH GmbH [51283250], Einbeck, NDS, Germany.
This item is printed on demand - Print on Demand Titel. Neuware - This book investigates the possibility to design and analyze a memory element using Gallium Nitride (GaN) based Heterojunction Field Effect Transistors (HFETs). The memory element uses a single transistor and zero capacitor. This memory takes advantage of the natural coexistence of both hole and electron gases in such heterojunction based devices. The two dimensional hole gas has been considered in the past as parasitic. It triggers hysteresis and transient effects within the FET output characteristics. Using this phenomenon, however, we propose an implementation of the memory concept in GaN/AlGaN/GaN HFET. The system is composed of the GaN/AlGaN/GaN regions.It may be integrated with conventional GaN HFET based technology as well. The present studies are performed using the ATLAS device simulator by Silvaco International. 92 pp. Englisch.
This item is printed on demand - Print on Demand Titel. Neuware - This book investigates the possibility to design and analyze a memory element using Gallium Nitride (GaN) based Heterojunction Field Effect Transistors (HFETs). The memory element uses a single transistor and zero capacitor. This memory takes advantage of the natural coexistence of both hole and electron gases in such heterojunction based devices. The two dimensional hole gas has been considered in the past as parasitic. It triggers hysteresis and transient effects within the FET output characteristics. Using this phenomenon, however, we propose an implementation of the memory concept in GaN/AlGaN/GaN HFET. The system is composed of the GaN/AlGaN/GaN regions.It may be integrated with conventional GaN HFET based technology as well. The present studies are performed using the ATLAS device simulator by Silvaco International. 92 pp. Englisch.
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Design of Capacitorless Memory Cell based on GaN Heterostructures
DE NWISBN: 9783659105562 bzw. 3659105562, in Deutsch, neu.
Lieferung aus: Deutschland, zzgl. Versandkosten.
This book investigates the possibility to design and analyze a memory element using Gallium Nitride (GaN) based Heterojunction Field Effect Transistors (HFETs). The memory element uses a single transistor and zero capacitor. This memory takes advantage of the natural coexistence of both hole and electron gases in such heterojunction based devices. The two dimensional hole gas has been considered in the past as parasitic. It triggers hysteresis and transient effects within the FET output characteristics. Using this phenomenon, however, we propose an implementation of the memory concept in GaN/AlGaN/GaN HFET. The system is composed of the GaN/AlGaN/GaN regions.It may be integrated with conventional GaN HFET based technology as well. The present studies are performed using the ATLAS device simulator by Silvaco International.
This book investigates the possibility to design and analyze a memory element using Gallium Nitride (GaN) based Heterojunction Field Effect Transistors (HFETs). The memory element uses a single transistor and zero capacitor. This memory takes advantage of the natural coexistence of both hole and electron gases in such heterojunction based devices. The two dimensional hole gas has been considered in the past as parasitic. It triggers hysteresis and transient effects within the FET output characteristics. Using this phenomenon, however, we propose an implementation of the memory concept in GaN/AlGaN/GaN HFET. The system is composed of the GaN/AlGaN/GaN regions.It may be integrated with conventional GaN HFET based technology as well. The present studies are performed using the ATLAS device simulator by Silvaco International.
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Design of Capacitorless Memory Cell based on GaN Heterostructures
~EN NW ABISBN: 9783659105562 bzw. 3659105562, vermutlich in Englisch, neu, Hörbuch.
Lieferung aus: Schweiz, Lieferzeit: 2 Tage, zzgl. Versandkosten.
This book investigates the possibility to design and analyze a memory element using Gallium Nitride (GaN) based Heterojunction Field Effect Transistors (HFETs). The memory element uses a single transistor and zero capacitor. This memory takes advantage of the natural coexistence of both hole and electron gases in such heterojunction based devices. The two dimensional hole gas has been considered in the past as parasitic. It triggers hysteresis and transient effects within the FET output characteristics. Using this phenomenon, however, we propose an implementation of the memory concept in GaN/AlGaN/GaN HFET. The system is composed of the GaN/AlGaN/GaN regions.It may be integrated with conventional GaN HFET based technology as well. The present studies are performed using the ATLAS device simulator by Silvaco International.
This book investigates the possibility to design and analyze a memory element using Gallium Nitride (GaN) based Heterojunction Field Effect Transistors (HFETs). The memory element uses a single transistor and zero capacitor. This memory takes advantage of the natural coexistence of both hole and electron gases in such heterojunction based devices. The two dimensional hole gas has been considered in the past as parasitic. It triggers hysteresis and transient effects within the FET output characteristics. Using this phenomenon, however, we propose an implementation of the memory concept in GaN/AlGaN/GaN HFET. The system is composed of the GaN/AlGaN/GaN regions.It may be integrated with conventional GaN HFET based technology as well. The present studies are performed using the ATLAS device simulator by Silvaco International.
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Design of Capacitorless Memory Cell based on GaN Heterostructures - Gallium Nitride Devices
~EN PB NWISBN: 9783659105562 bzw. 3659105562, vermutlich in Englisch, LAP Lambert Academic Publishing, Taschenbuch, neu.
Lieferung aus: Deutschland, Versandkostenfrei.
Design of Capacitorless Memory Cell based on GaN Heterostructures: This book investigates the possibility to design and analyze a memory element using Gallium Nitride (GaN) based Heterojunction Field Effect Transistors (HFETs). The memory element uses a single transistor and zero capacitor. This memory takes advantage of the natural coexistence of both hole and electron gases in such heterojunction based devices. The two dimensional hole gas has been considered in the past as parasitic. It triggers hysteresis and transient effects within the FET output characteristics. Using this phenomenon, however, we propose an implementation of the memory concept in GaN/AlGaN/GaN HFET. The system is composed of the GaN/AlGaN/GaN regions.It may be integrated with conventional GaN HFET based technology as well. The present studies are performed using the ATLAS device simulator by Silvaco International. Englisch, Taschenbuch.
Design of Capacitorless Memory Cell based on GaN Heterostructures: This book investigates the possibility to design and analyze a memory element using Gallium Nitride (GaN) based Heterojunction Field Effect Transistors (HFETs). The memory element uses a single transistor and zero capacitor. This memory takes advantage of the natural coexistence of both hole and electron gases in such heterojunction based devices. The two dimensional hole gas has been considered in the past as parasitic. It triggers hysteresis and transient effects within the FET output characteristics. Using this phenomenon, however, we propose an implementation of the memory concept in GaN/AlGaN/GaN HFET. The system is composed of the GaN/AlGaN/GaN regions.It may be integrated with conventional GaN HFET based technology as well. The present studies are performed using the ATLAS device simulator by Silvaco International. Englisch, Taschenbuch.
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Symbolbild
Design of Capacitorless Memory Cell Based on Gan Heterostructures (2014)
DE PB NWISBN: 9783659105562 bzw. 3659105562, in Deutsch, Taschenbuch, neu.
Von Händler/Antiquariat, Paperbackshop-US [8408184], Secaucus, NJ, U.S.A.
New Book. This item is printed on demand. Shipped from US This item is printed on demand.
New Book. This item is printed on demand. Shipped from US This item is printed on demand.
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Design of Capacitorless Memory Cell Based on Gan Heterostructures (Paperback) (2014)
DE PB NW RPISBN: 9783659105562 bzw. 3659105562, in Deutsch, LAP Lambert Academic Publishing, United States, Taschenbuch, neu, Nachdruck.
Lieferung aus: Deutschland, Versandkostenfrei.
Von Händler/Antiquariat, The Book Depository EURO [60485773], Slough, United Kingdom.
Language: English Brand New Book ***** Print on Demand *****.
Von Händler/Antiquariat, The Book Depository EURO [60485773], Slough, United Kingdom.
Language: English Brand New Book ***** Print on Demand *****.
7
Symbolbild
Design of Capacitorless Memory Cell based on GaN Heterostructures (2014)
DE PB NW RPISBN: 9783659105562 bzw. 3659105562, in Deutsch, LAP Lambert Academic Publishing, Taschenbuch, neu, Nachdruck.
Von Händler/Antiquariat, English-Book-Service - A Fine Choice [1048135], Waldshut-Tiengen, Germany.
This item is printed on demand for shipment within 3 working days.
This item is printed on demand for shipment within 3 working days.
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Design of Capacitorless Memory Cell based
~EN PB NWISBN: 9783659105562 bzw. 3659105562, vermutlich in Englisch, Taschenbuch, neu.
Lieferung aus: Deutschland, Next Day, Versandkostenfrei.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
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