Modeling of Nanoscale Double-Gate and Gate-All-Around MOSFETs
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| Schnitt | € 56,12 | € 64,63 | € 57,51 | € 54,30 |
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1
Modeling of Nanoscale Double-Gate and Gate-All-Around Mosfets (2014)
DE PB NWISBN: 9783639727326 bzw. 3639727320, in Deutsch, Globeedit, Taschenbuch, neu.
Lieferung aus: Niederlande, 5-7 werkdagen.
bol.com.
A precise modeling framework for short-channel nanoscale double gate (DG) and gate-all-around (GAA) MOSFETs is presented. In the subthreshold regime, the modeling of the electrostatics of the DG MOSFET is based on a conformal mapping analysis. This analytical 2D solution of Laplace's equation gives the inter-electrode capacitive coupling. The GAA MOSFET is a 3D structure to which the 2D conformal mapping technique is not directly applicable. However, due to the structural similarities, the DG ca... A precise modeling framework for short-channel nanoscale double gate (DG) and gate-all-around (GAA) MOSFETs is presented. In the subthreshold regime, the modeling of the electrostatics of the DG MOSFET is based on a conformal mapping analysis. This analytical 2D solution of Laplace's equation gives the inter-electrode capacitive coupling. The GAA MOSFET is a 3D structure to which the 2D conformal mapping technique is not directly applicable. However, due to the structural similarities, the DG calculations can also be applied with a high degree of precision to the cylindrical GAA MOSFET by performing a simple geometric scaling transformation. Near and above threshold, self-consistent procedures invoking the the 2D/3D Poisson's equation in combination with boundary conditions and suitable modeling expressions are used to model the electrostatics of the two devices. The drain current is calculated as part of the self-consistent treatment, and based on the precise modeling of the 2D/3D electrostatics the intrinsic capacitances can also be extracted.Taal: Engels;Afmetingen: 9x229x152 mm;Gewicht: 236,00 gram;Verschijningsdatum: september 2014;ISBN10: 3639727320;ISBN13: 9783639727326; Engelstalig | Paperback | 2014.
bol.com.
A precise modeling framework for short-channel nanoscale double gate (DG) and gate-all-around (GAA) MOSFETs is presented. In the subthreshold regime, the modeling of the electrostatics of the DG MOSFET is based on a conformal mapping analysis. This analytical 2D solution of Laplace's equation gives the inter-electrode capacitive coupling. The GAA MOSFET is a 3D structure to which the 2D conformal mapping technique is not directly applicable. However, due to the structural similarities, the DG ca... A precise modeling framework for short-channel nanoscale double gate (DG) and gate-all-around (GAA) MOSFETs is presented. In the subthreshold regime, the modeling of the electrostatics of the DG MOSFET is based on a conformal mapping analysis. This analytical 2D solution of Laplace's equation gives the inter-electrode capacitive coupling. The GAA MOSFET is a 3D structure to which the 2D conformal mapping technique is not directly applicable. However, due to the structural similarities, the DG calculations can also be applied with a high degree of precision to the cylindrical GAA MOSFET by performing a simple geometric scaling transformation. Near and above threshold, self-consistent procedures invoking the the 2D/3D Poisson's equation in combination with boundary conditions and suitable modeling expressions are used to model the electrostatics of the two devices. The drain current is calculated as part of the self-consistent treatment, and based on the precise modeling of the 2D/3D electrostatics the intrinsic capacitances can also be extracted.Taal: Engels;Afmetingen: 9x229x152 mm;Gewicht: 236,00 gram;Verschijningsdatum: september 2014;ISBN10: 3639727320;ISBN13: 9783639727326; Engelstalig | Paperback | 2014.
2
Modeling of Nanoscale Double-Gate and Gate-All-Around MOSFETs
~EN PB NWISBN: 9783639727326 bzw. 3639727320, vermutlich in Englisch, Globeedit, Taschenbuch, neu.
Lieferung aus: Deutschland, Versandkostenfrei.
Modeling of Nanoscale Double-Gate and Gate-All-Around MOSFETs: A precise modeling framework for short-channel nanoscale double gate (DG) and gate-all-around (GAA) MOSFETs is presented. In the subthreshold regime, the modeling of the electrostatics of the DG MOSFET is based on a conformal mapping analysis. This analytical 2D solution of Laplace`s equation gives the inter-electrode capacitive coupling. The GAA MOSFET is a 3D structure to which the 2D conformal mapping technique is not directly applicable. However, due to the structural similarities, the DG calculations can also be applied with a high degree of precision to the cylindrical GAA MOSFET by performing a simple geometric scaling transformation. Near and above threshold, self-consistent procedures invoking the the 2D/3D Poisson`s equation in combination with boundary conditions and suitable modeling expressions are used to model the electrostatics of the two devices. The drain current is calculated as part of the self-consistent treatment, and based on the precise modeling of the 2D/3D electrostatics the intrinsic capacitances can also be extracted. Englisch, Taschenbuch.
Modeling of Nanoscale Double-Gate and Gate-All-Around MOSFETs: A precise modeling framework for short-channel nanoscale double gate (DG) and gate-all-around (GAA) MOSFETs is presented. In the subthreshold regime, the modeling of the electrostatics of the DG MOSFET is based on a conformal mapping analysis. This analytical 2D solution of Laplace`s equation gives the inter-electrode capacitive coupling. The GAA MOSFET is a 3D structure to which the 2D conformal mapping technique is not directly applicable. However, due to the structural similarities, the DG calculations can also be applied with a high degree of precision to the cylindrical GAA MOSFET by performing a simple geometric scaling transformation. Near and above threshold, self-consistent procedures invoking the the 2D/3D Poisson`s equation in combination with boundary conditions and suitable modeling expressions are used to model the electrostatics of the two devices. The drain current is calculated as part of the self-consistent treatment, and based on the precise modeling of the 2D/3D electrostatics the intrinsic capacitances can also be extracted. Englisch, Taschenbuch.
3
Modeling of Nanoscale Double-Gate and Gate-All-Around MOSFETs
~EN NW ABISBN: 9783639727326 bzw. 3639727320, vermutlich in Englisch, VDM Verlag Dr. Müller, Saarbrücken, Deutschland, neu, Hörbuch.
Lieferung aus: Deutschland, Lieferzeit: 5 Tage.
A precise modeling framework for short-channel nanoscale double gate (DG) and gate-all-around (GAA) MOSFETs is presented. In the subthreshold regime, the modeling of the electrostatics of the DG MOSFET is based on a conformal mapping analysis. This analytical 2D solution of Laplace's equation gives the inter-electrode capacitive coupling. The GAA MOSFET is a 3D structure to which the 2D conformal mapping technique is not directly applicable. However, due to the structural similarities, the DG calculations can also be applied with a high degree of precision to the cylindrical GAA MOSFET by performing a simple geometric scaling transformation. Near and above threshold, self-consistent procedures invoking the the 2D/3D Poisson's equation in combination with boundary conditions and suitable modeling expressions are used to model the electrostatics of the two devices. The drain current is calculated as part of the self-consistent treatment, and based on the precise modeling of the 2D/3D electrostatics the intrinsic capacitances can also be extracted.
A precise modeling framework for short-channel nanoscale double gate (DG) and gate-all-around (GAA) MOSFETs is presented. In the subthreshold regime, the modeling of the electrostatics of the DG MOSFET is based on a conformal mapping analysis. This analytical 2D solution of Laplace's equation gives the inter-electrode capacitive coupling. The GAA MOSFET is a 3D structure to which the 2D conformal mapping technique is not directly applicable. However, due to the structural similarities, the DG calculations can also be applied with a high degree of precision to the cylindrical GAA MOSFET by performing a simple geometric scaling transformation. Near and above threshold, self-consistent procedures invoking the the 2D/3D Poisson's equation in combination with boundary conditions and suitable modeling expressions are used to model the electrostatics of the two devices. The drain current is calculated as part of the self-consistent treatment, and based on the precise modeling of the 2D/3D electrostatics the intrinsic capacitances can also be extracted.
5
Modeling of Nanoscale Double-Gate and Gate-All-Around MOSFETs
~EN PB NWISBN: 3639727320 bzw. 9783639727326, vermutlich in Englisch, GlobeEdit, Taschenbuch, neu.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
6
Modeling of Nanoscale Double-Gate and Gate-All-Around MOSFETs (2018)
~EN PB NWISBN: 9783639727326 bzw. 3639727320, vermutlich in Englisch, VDM Verlag Dr. Müller, Saarbrücken, Deutschland, Taschenbuch, neu.
Lieferung aus: Deutschland, Next Day, Versandkostenfrei.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
7
Modeling of Nanoscale Double-Gate and Gate-All-Around Mosfets by Borli Hakon.
DE NWISBN: 9783639727326 bzw. 3639727320, in Deutsch, VDM Verlag Dr. Müller, Saarbrücken, Deutschland, neu.
Lieferung aus: Vereinigtes Königreich Großbritannien und Nordirland, Lieferart: Free, Lieferung: Vereinigtes Königreich Großbritannien und Nordirland, Artikelstandort: GL15SQ Gloucester,United Kingdom, משלוח חינם.
Von Händler/Antiquariat, loveourprices2.
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Von Händler/Antiquariat, loveourprices2.
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8
Modeling of Nanoscale Double-Gate and Gate-All-Around Mosfets by Borli Hakon
EN NWISBN: 9783639727326 bzw. 3639727320, in Englisch, VDM Verlag Dr. Müller, Saarbrücken, Deutschland, neu.
Lieferung aus: Vereinigtes Königreich Großbritannien und Nordirland, Lieferart: Free, Lieferung: Vereinigte Staaten von Amerika, Artikelstandort: GL15SQ United Kingdom, משלוח חינם.
Von Händler/Antiquariat, shoppingmadeeasy2.
Festpreisangebot.
Von Händler/Antiquariat, shoppingmadeeasy2.
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