MODELING BIPOLAR POWER SEMICONDUCTOR DEVICES - 6 Angebote vergleichen
Bester Preis: € 41,54 (vom 21.03.2017)1
Modeling Bipolar Power Semiconductor Devices
EN NW EB DLISBN: 9783031024986 bzw. 3031024982, in Englisch, neu, E-Book, elektronischer Download.
Lieferung aus: Vereinigte Staaten von Amerika, Lagernd, zzgl. Versandkosten.
This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models.
This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models.
2
Transient Electro-Thermal Modeling of Bipolar Power Semiconductor Devices
EN NW EBISBN: 9781627051897 bzw. 1627051899, in Englisch, Morgan & Claypool Publishers, neu, E-Book.
Lieferung aus: Vereinigte Staaten von Amerika, Ebook for download.
Technology, This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models.The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation.The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device. eBook.
Technology, This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models.The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation.The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device. eBook.
3
Transient Electro-Thermal Modeling of Bipolar Power Semiconductor Devices als Taschenbuch von Tanya Kirilova Gachovska, Bin Du, Jerry L. Hudgins
EN PB NWISBN: 9781627051897 bzw. 1627051899, in Englisch, Morgan & Claypool Publishers, Taschenbuch, neu.
Transient Electro-Thermal Modeling of Bipolar Power Semiconductor Devices ab 31.49 EURO.
4
MODELING BIPOLAR POWER SEMICONDUCTOR DEVICES (2013)
ES USISBN: 9781627051217 bzw. 162705121X, in Spanisch, Morgan & Claypool Publishers, gebraucht.
Lieferung aus: Spanien, Normalmente se envía en el plazo de 1-2 días laborable, zzgl. Versandkosten (wenn der Anbieter in Ihr Land liefert).
Von Händler/Antiquariat, Herb Tandree Philosophy Books.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Von Händler/Antiquariat, Herb Tandree Philosophy Books.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
5
Transient Electro-Thermal Modeling of Bipolar Power Semiconductor Devices
EN PB NWISBN: 9781627051897 bzw. 1627051899, in Englisch, Morgan and Claypool Publishers, Taschenbuch, neu.
Lieferung aus: Vereinigte Staaten von Amerika, In Stock.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
6
Modeling Bipolar Power Semiconductor Devices
DE NW EBISBN: 9783031024986 bzw. 3031024982, in Deutsch, Springer International Publishing, Springer International Publishing, neu, E-Book.
Lieferung aus: Deutschland, Versandkostenfrei, in stock.
Modeling Bipolar Power Semiconductor Devices: ab 28.99 €.
Modeling Bipolar Power Semiconductor Devices: ab 28.99 €.
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