NANOSCALE TRANSISTORS: DEVICE PHYSICS, MODELING AND SIMULATION
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Lieferung aus: Indien, शिपिंग लागत के लिए: IND.
Von Händler/Antiquariat, Books WorldWide Express.
Softcover. Brand New. “International Editionö - ISBN number and front cover may be different in rare cases but contents are same as the US edition. FOR MULTIPLE ORDERS AND EXPEDITE ORDERS, WE USE FEDEX/UPS/DHL SERVICE & RECEIVE FAST WITHIN 3-5 BUSINESS DAYS. No shipping to PO BOX, APO, FPO addresses. Kindly provide day time phone number in order to ensure smooth delivery. Printed in black & white in English language. Territorial restrictions may be printed on the book. We may ship from Asian regions for inventory purpose. 100% Customer satisfaction guaranteed! We use Fast Shipping via DHL/FEDEX/UPS.

Lieferung aus: Indien, शिपिंग लागत के लिए: IND.
Von Händler/Antiquariat, A - Z Books.
New Age International (P) Limited, 2008. First edition. Hardcover. New. Nanoscale Transistors: Device Physics, Modeling and Simulation describes the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working with nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. Chapter 1 reviews some basic concepts, and Chapter 2 summarizes the essentials of traditional semiconductor devices, digital circuits, and systems. This material provides a baseline against which new devices can be assessed. Chapter 3 and 4 present a non-traditional view of the MOSFET using concepts that are valid at nanoscale. Chapter 5 applies the same concepts to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. Chapter 6 explores the limits of devices by discussing conduction in single molecules. The book is useful reference for senior-level or graduate-level courses on nanoelectronics, modeling and simulation. It is also valuable to scientists and engineers who are pushing MOSFETs to their limits and developing revolutionary nanoscale devices. Printed Pages: 226.

Lieferung aus: Indien, शिपिंग लागत के लिए: IND.
Von Händler/Antiquariat, BookVistas.
New Age International (P) Limited, 2008. First edition. Hardcover. New. Nanoscale Transistors: Device Physics, Modeling and Simulation describes the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working with nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. Chapter 1 reviews some basic concepts, and Chapter 2 summarizes the essentials of traditional semiconductor devices, digital circuits, and systems. This material provides a baseline against which new devices can be assessed. Chapter 3 and 4 present a non-traditional view of the MOSFET using concepts that are valid at nanoscale. Chapter 5 applies the same concepts to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. Chapter 6 explores the limits of devices by discussing conduction in single molecules. The book is useful reference for senior-level or graduate-level courses on nanoelectronics, modeling and simulation. It is also valuable to scientists and engineers who are pushing MOSFETs to their limits and developing revolutionary nanoscale devices. Printed Pages: 226.

Lieferung aus: Indien, Usually dispatched within 4-5 business days.
Von Händler/Antiquariat, UltraLargeSale.
Nanoscale Transistors: Device Physics, Modeling and Simulation describes the recent development of theory, modeling and simulation of nanotransistors for electrical engineers, physicists and chemists working with nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. Chapter 1 reviews some basic concepts and Chapter 2 summarizes the essentials of traditional semiconductor devices, digital circuits and systems. This material provides a baseline against which new devices can be assessed. Chapter 3 and 4 present a non-traditional view of the MOSFET using concepts that are valid at nanoscale. Chapter 5 applies the same concepts to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. Chapter 6 explores the limits of devices by discussing conduction in single molecules. The book is useful reference for senior-level or graduate-level courses on nanoelectronics, modeling and simulation. It is also valuable to scientists and engineers who are pushing MOSFETs to their limits and developing revolutionary nanoscale devices. This special low-priced edition is for sale in India, Bangladesh, Nepal, Pakistan and Sri Lanka only. , Hardcover, लेबल: Springer (sie), Springer (sie), उत्पाद समूह: Book, प्रकाशित: 2008-01-01, स्टूडियो: Springer (sie), बिक्री रैंक: 85784.

Lieferung aus: Indien, प्लस शिपिंग, शिपिंग क्षेत्र: INT.
Von Händler/Antiquariat, uJustBuy, DELHI, New Delhi, [RE:3].