SiC Materials and Devices: Volume 1: v. 1 (Selected Topics in Electronics & Systems)
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Preise | 2012 | 2013 | 2014 | 2015 |
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Schnitt | € 167,87 | € 70,22 | € 65,93 | € 81,30 |
Nachfrage |
1
SiC Materials and Devices: v. 1 (Hardback) (2006)
EN HC NW
ISBN: 9789812568359 bzw. 9812568352, in Englisch, gebundenes Buch, neu.
Lieferung aus: Deutschland, Versandkostenfrei.
Von Händler/Antiquariat, The Book Depository [54837791], Guernsey, GY, United Kingdom.
Brand New Book. After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices - power switching Schottky diodes and high temperature MESFETs - are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, "SiC Materials and Devices" is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Von Händler/Antiquariat, The Book Depository [54837791], Guernsey, GY, United Kingdom.
Brand New Book. After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices - power switching Schottky diodes and high temperature MESFETs - are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, "SiC Materials and Devices" is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
2
3
Sic Materials And Devices (Selected Topics in Electronics and Systems) (2006)
EN HC NW
ISBN: 9789812568359 bzw. 9812568352, in Englisch, 334 Seiten, World Scientific Publishing Company, gebundenes Buch, neu.
Lieferung aus: Vereinigte Staaten von Amerika, Usually ships in 1-2 business days.
Von Händler/Antiquariat, pbshopus.
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices power switching Schottky diodes and high temperature MESFETs are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology. Hardcover, Label: World Scientific Publishing Company, World Scientific Publishing Company, Produktgruppe: Book, Publiziert: 2006-07-25, Studio: World Scientific Publishing Company, Verkaufsrang: 3894133.
Von Händler/Antiquariat, pbshopus.
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices power switching Schottky diodes and high temperature MESFETs are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology. Hardcover, Label: World Scientific Publishing Company, World Scientific Publishing Company, Produktgruppe: Book, Publiziert: 2006-07-25, Studio: World Scientific Publishing Company, Verkaufsrang: 3894133.
4
Sous la direction de: Michael S. Shur, Sous la direction de: Sergey Rumyantsev, Sous la direction de: Michael Levinshtein
Sic Materials And Devices (2006)
EN NW
ISBN: 9789812568359 bzw. 9812568352, in Englisch, 334 Seiten, World Scientific Publishing Co Pte Ltd, neu.
Lieferung aus: Frankreich, Expédition sous 1 à 2 jours ouvrés.
Von Händler/Antiquariat, books_and_music.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Von Händler/Antiquariat, books_and_music.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
5
Sous la direction de: Michael S. Shur, Sous la direction de: Sergey Rumyantsev, Sous la direction de: Michael Levinshtein
Sic Materials And Devices (2006)
EN US
ISBN: 9789812568359 bzw. 9812568352, in Englisch, 334 Seiten, World Scientific Publishing Co Pte Ltd, gebraucht.
Lieferung aus: Frankreich, Expédition sous 1 à 2 jours ouvrés.
Von Händler/Antiquariat, Nearfine.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Von Händler/Antiquariat, Nearfine.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
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