Physics of Semiconductor Devices by 9780471143239 - 5 Angebote vergleichen
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Physics of Semiconductor Devices, 3rd ed.
EN PBISBN: 9780471143239 bzw. 0471143235, in Englisch, Wiley, Vereinigte Staaten von Amerika, Taschenbuch.
Lieferung aus: Indien, Транспортните разходи до: BGR.
Von Händler/Antiquariat, Laksme Traders.
3rd edition. Softcover. New.. Brand New; Paperback; Black & White or Color International Edition. ISBN and Cover page may differ but similar contents as US edition. GET IT FAST in 3-5 business days by DHL/FEDEX with tracking number. Books printed in English. No shipping to PO Box/APO/FPO address. In some instances, the international textbooks may have different end chapter case studies and exercises. International Edition Textbooks may bear a label "Not for sale in the U.S. or Canada" and "Content may different from U.S. Edition" - printed only to discourage U.S. students from obtaining an affordable copy. The U.S. Supreme Court has asserted your right to purchase international editions, and ruled on this issue. Access code or CD is not provided with these editions, unless specified. We may ship the books from multiple warehouses across the globe, including India depending upon the availability of inventory storage. Customer satisfaction guaranteed.
Von Händler/Antiquariat, Laksme Traders.
3rd edition. Softcover. New.. Brand New; Paperback; Black & White or Color International Edition. ISBN and Cover page may differ but similar contents as US edition. GET IT FAST in 3-5 business days by DHL/FEDEX with tracking number. Books printed in English. No shipping to PO Box/APO/FPO address. In some instances, the international textbooks may have different end chapter case studies and exercises. International Edition Textbooks may bear a label "Not for sale in the U.S. or Canada" and "Content may different from U.S. Edition" - printed only to discourage U.S. students from obtaining an affordable copy. The U.S. Supreme Court has asserted your right to purchase international editions, and ruled on this issue. Access code or CD is not provided with these editions, unless specified. We may ship the books from multiple warehouses across the globe, including India depending upon the availability of inventory storage. Customer satisfaction guaranteed.
2
Physics of Semiconductor Devices (2006)
EN NWISBN: 9780471143239 bzw. 0471143235, in Englisch, Wiley & Sons Wiley-Blackwell, neu.
Lieferung aus: Deutschland, Versandkosten nach: Österreich.
Von Händler/Antiquariat, Syndikat Buchdienst, [4235284].
AUSFÜHRLICHERE BESCHREIBUNG: The Third Edition of the standard textbook and reference in thefield of semiconductor devices This classic book has set the standard for advanced study andreference in the semiconductor device field. Now completely updatedand reorganized to reflect the tremendous advances in deviceconcepts and performance, this Third Edition remains the mostdetailed and exhaustive single source of information on the mostimportant semiconductor devices. It gives readers immediate accessto detailed descriptions of the underlying physics and performancecharacteristics of all major bipolar, field-effect, microwave,photonic, and sensor devices. Designed for graduate textbook adoptions and reference needs,this new edition includes: A complete update of the latest developments New devices such as three-dimensional MOSFETs, MODFETs,resonant-tunneling diodes, semiconductor sensors, quantum-cascadelasers, single-electron transistors, real-space transfer devices,and more Materials completely reorganized Problem sets at the end of each chapter All figures reproduced at the highest quality Physics of Semiconductor Devices, Third Edition offersengineers, research scientists, faculty, and students a practicalbasis for understanding the most important devices in use today andfor evaluating future device performance and limitations. A Solutions Manual is available from the editorialdepartment. INHALT: Introduction. Part I Semiconductor Physics. Chapter 1 Physics and Properties of Semiconductors-A Review. 1.1 Introduction. 1.2 Crystal Structure. 1.3 Energy Bands and Energy Gap. 1.4 Carrier Concentration at Thermal Equilibrium. 1.5 Carrier-Transport Phenomena. 1.6 Phonon, Optical, and Thermal Properties. 1.7 Heterojunctions and Nanostructures. 1.8 Basic Equations and Examples. Part II Device Building Blocks. Chapter 2 p-n Junctions. 2.1 Introduction. 2.2 Depletion Region. 2.3 Current-Voltage Characteristics. 2.4 Junction Breakdown. 2.5 Transient Behavior and Noise. 2.6 Terminal Functions. 2.7 Heterojunctions. Chapter 3 Metal-Semiconductor Contacts. 3.1 Introduction. 3.2 Formation of Barrier. 3.3 Current Transport Processes. 3.4 Measurement of Barrier Height. 3.5 Device Structures. 3.6 Ohmic Contact. Chapter 4 Metal-Insulator-Semiconductor Capacitors. 4.1 Introduction. 4.2 Ideal MIS Capacitor. 4.3 Silicon MOS Capacitor. Part III Transistors. Chapter 5 Bipolar Transistors. 5.1 Introduction. 5.2 Static Characteristics. 5.3 Microwave Characteristics. 5.4 Related Device Structures. 5.5 Heterojunction Bipolar Transistor. Chapter 6 MOSFETs. 6.1 Introduction. 6.2 Basic Device Characteristics. 6.3 Nonuniform Doping and Buried-Channel Device. 6.4 Device Scaling and Short-Channel Effects. 6.5 MOSFET Structures. 6.6 Circuit Applications. 6.7 Nonvolatile Memory Devices. 6.8 Single-Electron Transistor. Chapter 7 JFETs, MESFETs, and MODFETs. 7.1 Introduction. 7.2 JFET and MESFET. 7.3 MODFET. Part IV Negative-Resistance and Power Devices. Chapter 8 Tunnel Devices. 8.1 Introduction. 8.2 Tunnel Diode. 8.3 Related Tunnel Devices. 8.4 Resonant-Tunneling Diode. Chapter 9 IMPATT Diodes. 9.1 Introduction. 9.2 Static Characteristics. 9.3 Dynamic Characteristics. 9.4 Power and Efficiency. 9.5 Noise Behavior. 9.6 Device Design and Performance. 9.7 BARITT Diode. 9.8 TUNNETT Diode. Chapter 10 Transferred-Electron and Real-Space-TransferDevices. 10.1 Introduction. 10.2 Transferred-Electron Device. 10.3 Real-Space-Transfer Devices. Chapter 11 Thyristors and Power Devices. 11.1 Introduction. 11.2 Thyristor Characteristics. 1 1.3 Thyristor Variations. 11.4 Other Power Devices. Part V Photonic Devices and Sensors. Chapter 12 LEDs and Lasers. 12.1 Introduction. 12.2 Radiative Transitions. 12.3 Light-Emitting Diode (LED). 12.4 Laser Physics. 12.5 Laser Operating Characteristics. 12.6 Specialty Lasers. Chapter 13 Photodetectors and Solar Cells. 13.1 Introduction. 13.2 Photoconductor. 13.3 Photodiodes. 13.4 Avalanche Photodiode. 13.5 Phototransistor. 13.6 Charge-Coupled Device (CCD). 13.7 Metal-Semiconductor-Metal Photodetector. 13.8 Quantum-Well Infrared Photodetector. 13.9 Solar Cell. Chapter 14 Sensors. 14.1 Introduction. 14.2 Thermal Sensors. 14.3 Mechanical Sensors. 14.4 Magnetic Sensors. 14.5 Chemical Sensors. Appendixes. A. List of Symbols. B. International System of Units. C. Unit Prefixes. D. Greek Alphabet. E. Physical Constants. F. Properties of Important Semiconductors. G. Properties of Si and GaAs. H. Properties of SiO, and Si3N. Index. Buch, gebundene Ausgabe, Neuware, H: 241mm, B: 162mm, T: 42mm, 1290g.
Von Händler/Antiquariat, Syndikat Buchdienst, [4235284].
AUSFÜHRLICHERE BESCHREIBUNG: The Third Edition of the standard textbook and reference in thefield of semiconductor devices This classic book has set the standard for advanced study andreference in the semiconductor device field. Now completely updatedand reorganized to reflect the tremendous advances in deviceconcepts and performance, this Third Edition remains the mostdetailed and exhaustive single source of information on the mostimportant semiconductor devices. It gives readers immediate accessto detailed descriptions of the underlying physics and performancecharacteristics of all major bipolar, field-effect, microwave,photonic, and sensor devices. Designed for graduate textbook adoptions and reference needs,this new edition includes: A complete update of the latest developments New devices such as three-dimensional MOSFETs, MODFETs,resonant-tunneling diodes, semiconductor sensors, quantum-cascadelasers, single-electron transistors, real-space transfer devices,and more Materials completely reorganized Problem sets at the end of each chapter All figures reproduced at the highest quality Physics of Semiconductor Devices, Third Edition offersengineers, research scientists, faculty, and students a practicalbasis for understanding the most important devices in use today andfor evaluating future device performance and limitations. A Solutions Manual is available from the editorialdepartment. INHALT: Introduction. Part I Semiconductor Physics. Chapter 1 Physics and Properties of Semiconductors-A Review. 1.1 Introduction. 1.2 Crystal Structure. 1.3 Energy Bands and Energy Gap. 1.4 Carrier Concentration at Thermal Equilibrium. 1.5 Carrier-Transport Phenomena. 1.6 Phonon, Optical, and Thermal Properties. 1.7 Heterojunctions and Nanostructures. 1.8 Basic Equations and Examples. Part II Device Building Blocks. Chapter 2 p-n Junctions. 2.1 Introduction. 2.2 Depletion Region. 2.3 Current-Voltage Characteristics. 2.4 Junction Breakdown. 2.5 Transient Behavior and Noise. 2.6 Terminal Functions. 2.7 Heterojunctions. Chapter 3 Metal-Semiconductor Contacts. 3.1 Introduction. 3.2 Formation of Barrier. 3.3 Current Transport Processes. 3.4 Measurement of Barrier Height. 3.5 Device Structures. 3.6 Ohmic Contact. Chapter 4 Metal-Insulator-Semiconductor Capacitors. 4.1 Introduction. 4.2 Ideal MIS Capacitor. 4.3 Silicon MOS Capacitor. Part III Transistors. Chapter 5 Bipolar Transistors. 5.1 Introduction. 5.2 Static Characteristics. 5.3 Microwave Characteristics. 5.4 Related Device Structures. 5.5 Heterojunction Bipolar Transistor. Chapter 6 MOSFETs. 6.1 Introduction. 6.2 Basic Device Characteristics. 6.3 Nonuniform Doping and Buried-Channel Device. 6.4 Device Scaling and Short-Channel Effects. 6.5 MOSFET Structures. 6.6 Circuit Applications. 6.7 Nonvolatile Memory Devices. 6.8 Single-Electron Transistor. Chapter 7 JFETs, MESFETs, and MODFETs. 7.1 Introduction. 7.2 JFET and MESFET. 7.3 MODFET. Part IV Negative-Resistance and Power Devices. Chapter 8 Tunnel Devices. 8.1 Introduction. 8.2 Tunnel Diode. 8.3 Related Tunnel Devices. 8.4 Resonant-Tunneling Diode. Chapter 9 IMPATT Diodes. 9.1 Introduction. 9.2 Static Characteristics. 9.3 Dynamic Characteristics. 9.4 Power and Efficiency. 9.5 Noise Behavior. 9.6 Device Design and Performance. 9.7 BARITT Diode. 9.8 TUNNETT Diode. Chapter 10 Transferred-Electron and Real-Space-TransferDevices. 10.1 Introduction. 10.2 Transferred-Electron Device. 10.3 Real-Space-Transfer Devices. Chapter 11 Thyristors and Power Devices. 11.1 Introduction. 11.2 Thyristor Characteristics. 1 1.3 Thyristor Variations. 11.4 Other Power Devices. Part V Photonic Devices and Sensors. Chapter 12 LEDs and Lasers. 12.1 Introduction. 12.2 Radiative Transitions. 12.3 Light-Emitting Diode (LED). 12.4 Laser Physics. 12.5 Laser Operating Characteristics. 12.6 Specialty Lasers. Chapter 13 Photodetectors and Solar Cells. 13.1 Introduction. 13.2 Photoconductor. 13.3 Photodiodes. 13.4 Avalanche Photodiode. 13.5 Phototransistor. 13.6 Charge-Coupled Device (CCD). 13.7 Metal-Semiconductor-Metal Photodetector. 13.8 Quantum-Well Infrared Photodetector. 13.9 Solar Cell. Chapter 14 Sensors. 14.1 Introduction. 14.2 Thermal Sensors. 14.3 Mechanical Sensors. 14.4 Magnetic Sensors. 14.5 Chemical Sensors. Appendixes. A. List of Symbols. B. International System of Units. C. Unit Prefixes. D. Greek Alphabet. E. Physical Constants. F. Properties of Important Semiconductors. G. Properties of Si and GaAs. H. Properties of SiO, and Si3N. Index. Buch, gebundene Ausgabe, Neuware, H: 241mm, B: 162mm, T: 42mm, 1290g.
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Physics Of Semiconductor Devices (2006)
EN HC NWISBN: 9780471143239 bzw. 0471143235, in Englisch, John Wiley And Sons Ltd, gebundenes Buch, neu.
Lieferung aus: Niederlande, 5-10 werkdagen.
bol.com.
This classic reference provides detailed information on the underlying physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. It integrates nearly 1,000 references to important original research papers and review articles, and includes more than 650 high-quality technical illustrations and 25 tables of material parameters for device analysis. In this third edition, all major topics of contemporary interests will be either be added or expanded. It will include problems and examples, as well as a solutions manual. Productinformatie:Soort: Met illustraties;Taal: Engels;Oorspronkelijke titel: Physics of Semiconductor Devices;Afmetingen: 0x0x0 mm;Gewicht: 1,27 kg;Druk: 1;ISBN10: 0471143235;ISBN13: 9780471143239;Product breedte: 165 mm;Product hoogte: 44 mm;Product lengte: 241 mm; Engels | Hardcover | 2006.
bol.com.
This classic reference provides detailed information on the underlying physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. It integrates nearly 1,000 references to important original research papers and review articles, and includes more than 650 high-quality technical illustrations and 25 tables of material parameters for device analysis. In this third edition, all major topics of contemporary interests will be either be added or expanded. It will include problems and examples, as well as a solutions manual. Productinformatie:Soort: Met illustraties;Taal: Engels;Oorspronkelijke titel: Physics of Semiconductor Devices;Afmetingen: 0x0x0 mm;Gewicht: 1,27 kg;Druk: 1;ISBN10: 0471143235;ISBN13: 9780471143239;Product breedte: 165 mm;Product hoogte: 44 mm;Product lengte: 241 mm; Engels | Hardcover | 2006.
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Physics of Semiconductor Devices (2006)
EN HC NWISBN: 9780471143239 bzw. 0471143235, in Englisch, 832 Seiten, 3. Ausgabe, Wiley-Interscience, gebundenes Buch, neu.
Neu ab: $143.81 (30 Angebote)
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Physics of Semiconductor Devices
EN USISBN: 0471143235 bzw. 9780471143239, in Englisch, Wiley-Interscience, gebraucht.
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Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
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