Novel Three-state Quantum Dot Gate Field Effect Transistor: Fabrication, Modeling and Applications
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Novel Three-state Quantum Dot Gate Field Effect Transistor: Fabrication, Modeling and Applications (2013)
EN NW EB DLISBN: 9788132216353 bzw. 8132216350, in Englisch, 134 Seiten, 2014. Ausgabe, Springer, neu, E-Book, elektronischer Download.
Lieferung aus: Vereinigte Staaten von Amerika, E-Book zum Download.
The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated., Kindle Edition, Ausgabe: 2014, Format: Kindle eBook, Label: Springer, Springer, Produktgruppe: eBooks, Publiziert: 2013-11-20, Freigegeben: 2013-11-20, Studio: Springer.
The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated., Kindle Edition, Ausgabe: 2014, Format: Kindle eBook, Label: Springer, Springer, Produktgruppe: eBooks, Publiziert: 2013-11-20, Freigegeben: 2013-11-20, Studio: Springer.
2
eBook Novel Three-state Quantum Dot Gate Field Effect Transistor
EN US EBISBN: 9788132216353 bzw. 8132216350, in Englisch, Springer India, Springer India, Springer India, gebraucht, E-Book.
Lieferung aus: Deutschland, zzgl. Versandkosten, ""Lieferzeit 1-3 Werktage"", in-stock.
The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (Qdgfet) and quantum dot gate Nmos inverter (Qdnmos inverter). It also introduces the development of a circuit model of Qdgfet based on Berkley Short Channe.
The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (Qdgfet) and quantum dot gate Nmos inverter (Qdnmos inverter). It also introduces the development of a circuit model of Qdgfet based on Berkley Short Channe.
3
Novel Three-state Quantum Dot Gate Field Effect Transistor als eBook Download von (2014)
DE NW EBISBN: 9788132216353 bzw. 8132216350, in Deutsch, Springer India, neu, E-Book.
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