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100%: Sous la direction de: Kazuo Morigaki, Sous la direction de: Harumi Hikita, Sous la direction de: Chisato Ogihara: Light-Induced Defects in Semiconductors (ISBN: 9789814411493) 2014, Pan Stanford, Erstausgabe, in Englisch, auch als eBook.Nur diese Ausgabe anzeigen…
100%: Herausgeber: Kazuo Morigaki, Herausgeber: Harumi Hikita, Herausgeber: Chisato Ogihara: Light-Induced Defects in Semiconductors (ISBN: 9789814411486) 2014, Pan Stanford Publishing Pte Ltd, Erstausgabe, in Englisch, Broschiert.Nur diese Ausgabe anzeigen…
Light-Induced Defects in Semiconductors - 7 Angebote vergleichen
1
Light-Induced Defects in Semiconductors (2014)
EN HC NW FEISBN: 9789814411486 bzw. 9814411485, in Englisch, 212 Seiten, Pan Stanford, gebundenes Buch, neu, Erstausgabe.
Lieferung aus: Vereinigte Staaten von Amerika, Usually ships in 24 hours, plus shipping (if shipped).
Von Händler/Antiquariat, Amazon.com.
This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related materials. It also discusses experimental evidence for this phenomenon. Light-induced defect creation in hydrogenated amorphous silicon (a-Si:H) is described in more detail, including its mechanism and experimental results. The subjects treated by the book are important issues from the viewpoints of physics and applications., Hardcover, Edition: 1, Label: Pan Stanford, Pan Stanford, Product group: Book, Published: 2014-09-13, Studio: Pan Stanford.
Von Händler/Antiquariat, Amazon.com.
This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related materials. It also discusses experimental evidence for this phenomenon. Light-induced defect creation in hydrogenated amorphous silicon (a-Si:H) is described in more detail, including its mechanism and experimental results. The subjects treated by the book are important issues from the viewpoints of physics and applications., Hardcover, Edition: 1, Label: Pan Stanford, Pan Stanford, Product group: Book, Published: 2014-09-13, Studio: Pan Stanford.
2
Light-Induced Defects in Semiconductors (2014)
EN HC US FEISBN: 9789814411486 bzw. 9814411485, in Englisch, 212 Seiten, Pan Stanford, gebundenes Buch, gebraucht, Erstausgabe.
Lieferung aus: Vereinigte Staaten von Amerika, Usually ships in 1-2 business days.
Von Händler/Antiquariat, SuperBookDeals--.
This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related materials. It also discusses experimental evidence for this phenomenon. Light-induced defect creation in hydrogenated amorphous silicon (a-Si:H) is described in more detail, including its mechanism and experimental results. The subjects treated by the book are important issues from the viewpoints of physics and applications., Hardcover, Edition: 1, Label: Pan Stanford, Pan Stanford, Product group: Book, Published: 2014-09-13, Studio: Pan Stanford.
Von Händler/Antiquariat, SuperBookDeals--.
This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related materials. It also discusses experimental evidence for this phenomenon. Light-induced defect creation in hydrogenated amorphous silicon (a-Si:H) is described in more detail, including its mechanism and experimental results. The subjects treated by the book are important issues from the viewpoints of physics and applications., Hardcover, Edition: 1, Label: Pan Stanford, Pan Stanford, Product group: Book, Published: 2014-09-13, Studio: Pan Stanford.
3
Sous la direction de: Kazuo Morigaki, Sous la direction de: Harumi Hikita, Sous la direction de: Chisato Ogihara
Light-Induced Defects in Semiconductors (2014)
EN NW FE EB DLISBN: 9789814411493 bzw. 9814411493, in Englisch, 212 Seiten, Pan Stanford, neu, Erstausgabe, E-Book, elektronischer Download.
Lieferung aus: Frankreich, ebook for download, Free shipping.
This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related materials. It also discusses experimental evidence for this phenomenon. Light-induced defect creation in hydrogenated amorphous silicon (a-Si:H) is described in more detail, including its mechanism and experimental results. The subjects treated by the book are important issues from the viewpoints of physics and applications., Format Kindle, Edition: 1, Format: Ebook Kindle, Label: Pan Stanford, Pan Stanford, Product group: eBooks, Published: 2014-09-13, Release date: 2014-09-13, Studio: Pan Stanford.
This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related materials. It also discusses experimental evidence for this phenomenon. Light-induced defect creation in hydrogenated amorphous silicon (a-Si:H) is described in more detail, including its mechanism and experimental results. The subjects treated by the book are important issues from the viewpoints of physics and applications., Format Kindle, Edition: 1, Format: Ebook Kindle, Label: Pan Stanford, Pan Stanford, Product group: eBooks, Published: 2014-09-13, Release date: 2014-09-13, Studio: Pan Stanford.
4
Light-Induced Defects in Semiconductors (2014)
EN HC NWISBN: 9789814411486 bzw. 9814411485, in Englisch, Pan Stanford Publishing Pte Ltd, gebundenes Buch, neu.
Lieferung aus: Niederlande, Vermoedelijk 4-6 weken.
bol.com.
This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related materials. It also discusses experimental evidence for this phenomenon. Light-induced defect creation in hydrogenated amorphous silicon (a-Si:H) is described in more detail, including its mechanism and experimental results. The subjects treated by the book are important issues from the viewpoints of physics and applications.Taal: Engels;Afmetingen: 15x229x152 mm;Gewicht: 430,00 gram;Verschijningsdatum: september 2014;Druk: 1;ISBN10: 9814411485;ISBN13: 9789814411486; Engelstalig | Hardcover | 2014.
bol.com.
This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related materials. It also discusses experimental evidence for this phenomenon. Light-induced defect creation in hydrogenated amorphous silicon (a-Si:H) is described in more detail, including its mechanism and experimental results. The subjects treated by the book are important issues from the viewpoints of physics and applications.Taal: Engels;Afmetingen: 15x229x152 mm;Gewicht: 430,00 gram;Verschijningsdatum: september 2014;Druk: 1;ISBN10: 9814411485;ISBN13: 9789814411486; Engelstalig | Hardcover | 2014.
5
Light-Induced Defects in Semiconductors (2014)
EN HC NWISBN: 9789814411486 bzw. 9814411485, in Englisch, 212 Seiten, Pan Stanford Publishing Pte Ltd, gebundenes Buch, neu.
Lieferung aus: Deutschland, Versandfertig in 1 - 2 Werktagen, plus shipping (if shipped).
Von Händler/Antiquariat, Ilys Webstore.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Von Händler/Antiquariat, Ilys Webstore.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
6
Light-Induced Defects in Semiconductors (2014)
EN HC USISBN: 9789814411486 bzw. 9814411485, in Englisch, 212 Seiten, Pan Stanford Publishing Pte Ltd, gebundenes Buch, gebraucht.
Lieferung aus: Deutschland, Versandfertig in 1 - 2 Werktagen, plus shipping (if shipped).
Von Händler/Antiquariat, ---SuperBookDeals---.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Von Händler/Antiquariat, ---SuperBookDeals---.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
7
Light-Induced Defects in Semiconductors (2014)
EN NW FE EB DLISBN: 9789814411493 bzw. 9814411493, in Englisch, 212 Seiten, Pan Stanford, neu, Erstausgabe, E-Book, elektronischer Download.
Lieferung aus: Kanada, ebook zakaj travnato gričevje, Brezplačna dostava.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
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