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100%: Patrick Hofmann: Hydride vapour phase epitaxy growth, crystal properties and dopant incorporation in gallium nitride (ISBN: 9783752884920) 2018, Books on Demand, Erstausgabe, in Englisch, Taschenbuch.
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100%: Patrick Hofmann: Hydride vapour phase epitaxy growth, crystal properties and dopant incorporation in gallium nitride (ISBN: 9783752845648) Books On Demand, in Deutsch, auch als eBook.
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Hydride vapour phase epitaxy growth, crystal properties and dopant incorporation in gallium nitride
5 Angebote vergleichen
Bester Preis: € 29,99 (vom 01.09.2018)1
Hydride vapour phase epitaxy growth, crystal properties and dopant incorporation in gallium nitride (2018)
EN PB NW FE
ISBN: 9783752884920 bzw. 3752884924, in Englisch, 164 Seiten, Books on Demand, Taschenbuch, neu, Erstausgabe.
Lieferung aus: Deutschland, Versandfertig in 3 - 4 Werktagen, Versandkostenfrei. Tatsächliche Versandkosten können abweichen.
Von Händler/Antiquariat, LitoA Buch- und Medienhandel.
This dissertation employs doping to investigate basic gallium nitride (GaN) crystal properties and to solve challenges of the hydride vapour phase epitaxy (HVPE) growth process. Whereas the first chapter is a short introduction to the history of the GaN single crystal growth, the 2nd chapter introduces to current crystal growth techniques, discusses properties of the GaN material system and the resulting influence on the applicable crystal growth techniques. HVPE, as a vapour phase epitaxy crystal growth method will be explained in greater detail, with focus on the used vertical reactor and its capabilities for doping. The 3rd chapter then focusses on point defects in GaN, specifically on intentionally introduced extrinsic point defects used for doping purposes, i.e. to achieve p-type, n-type or semi-insulating behaviour. Different dopants will be reviewed before the diffusion of point defects in a solid will be discussed. The in-situ introduction of iron, manganese, and carbon during crystal growth is employed in chapter 4 to compensate the unintentional doping (UID) of the GaN crystals, and therefore to achieve truly semi-insulating behaviour of the HVPE GaN. However the focus of this chapter lies on the characterisation of the pyroelectric coefficient (p), as semi-insulating properties are a necessary requirement for the applied Sharp-Garn measurement method. The creation of tensile stress due to in-situ silicon doping during GaN crystal growth is the topic of the 5th chapter. The tensile stress generation effect will be reproduced and the strain inside the crystal will be monitored ex-situ employing Raman spectroscopy. The n-type doping is achieved by using a vapour phase doping line and a process is developed to hinder the tensile strain generation effect. The 6th chapter concentrates on the delivery of the doping precursor via a solid state doping line, a newly developed doping method. Similar to chapter 5, the doping line is characterised carefully... Taschenbuch, Ausgabe: 1, Label: Books on Demand, Books on Demand, Produktgruppe: Book, Publiziert: 2018-08-15, Studio: Books on Demand.
Von Händler/Antiquariat, LitoA Buch- und Medienhandel.
This dissertation employs doping to investigate basic gallium nitride (GaN) crystal properties and to solve challenges of the hydride vapour phase epitaxy (HVPE) growth process. Whereas the first chapter is a short introduction to the history of the GaN single crystal growth, the 2nd chapter introduces to current crystal growth techniques, discusses properties of the GaN material system and the resulting influence on the applicable crystal growth techniques. HVPE, as a vapour phase epitaxy crystal growth method will be explained in greater detail, with focus on the used vertical reactor and its capabilities for doping. The 3rd chapter then focusses on point defects in GaN, specifically on intentionally introduced extrinsic point defects used for doping purposes, i.e. to achieve p-type, n-type or semi-insulating behaviour. Different dopants will be reviewed before the diffusion of point defects in a solid will be discussed. The in-situ introduction of iron, manganese, and carbon during crystal growth is employed in chapter 4 to compensate the unintentional doping (UID) of the GaN crystals, and therefore to achieve truly semi-insulating behaviour of the HVPE GaN. However the focus of this chapter lies on the characterisation of the pyroelectric coefficient (p), as semi-insulating properties are a necessary requirement for the applied Sharp-Garn measurement method. The creation of tensile stress due to in-situ silicon doping during GaN crystal growth is the topic of the 5th chapter. The tensile stress generation effect will be reproduced and the strain inside the crystal will be monitored ex-situ employing Raman spectroscopy. The n-type doping is achieved by using a vapour phase doping line and a process is developed to hinder the tensile strain generation effect. The 6th chapter concentrates on the delivery of the doping precursor via a solid state doping line, a newly developed doping method. Similar to chapter 5, the doping line is characterised carefully... Taschenbuch, Ausgabe: 1, Label: Books on Demand, Books on Demand, Produktgruppe: Book, Publiziert: 2018-08-15, Studio: Books on Demand.
2
Hydride vapour phase epitaxy growth, crystal properties and dopant incorporation in gallium nitride
DE PB NW
ISBN: 3752884924 bzw. 9783752884920, in Deutsch, Books on Demand, Taschenbuch, neu.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
3
Hydride vapour phase epitaxy growth, crystal properties and dopant incorporation in gallium nitride
DE NW EB DL
ISBN: 9783752845648 bzw. 3752845643, in Deutsch, Books On Demand, neu, E-Book, elektronischer Download.
Lieferung aus: Deutschland, Versandkostenfrei.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
4
Hydride vapour phase epitaxy growth, crystal properties and dopant incorporation in gallium nitride
DE NW EB DL
ISBN: 9783752845648 bzw. 3752845643, in Deutsch, neu, E-Book, elektronischer Download.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
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