Nanoscale Transistors: Device Physics, Modeling Simulation
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Bester Preis: 10,15 (vom 20.08.2016)
1
9780387280028 - Mark Lundstrom; Jing Guo: Nanoscale Transistors
Mark Lundstrom; Jing Guo

Nanoscale Transistors (2005)

Lieferung erfolgt aus/von: Deutschland EN HC NW

ISBN: 9780387280028 bzw. 0387280022, in Englisch, Springer, gebundenes Buch, neu.

Lieferung aus: Deutschland, Versandfertig in 1 - 2 Wochen.
The continuous scaling of transistors in the last half of century has been the driving force for electronics. The channel length of the transistors in production today is below 100nm. A wide variety of devices are also being explored to complement or even replace silicon transistors at molecular scales. Similarities between nanoscale and micronscale transistors exist, but nanotransistors also behave in drastically different ways. For example, ballistic transport and quantum effects become much m Silicon technology continues to progress, but device scaling is rapidly taking the metal oxide semiconductor field-effect transistor (MOSFET) to its limit. When MOS technology was developed in the 1960´s, channel lengths were about 10 micrometers, but researchers are now building transistors with channel lengths of less than 10 nanometers. New kinds of transistors and other devices are also being explored. Nanoscale MOSFET engineering continues, however, to be dominated by concepts and approaches originally developed to treat microscale devices. To push MOSFETs to their limits and to explore devices that may complement or even supplant them, a clear understanding of device physics at the nano/molecular scale will be essential. Our objective is to provide engineers and scientists with that understandin- not only of nano-devices, but also of the considerations that ultimately determine system performance. It is likely that nanoelectronics will involve much more than making smaller and different transistors, but nanoscale transistors provides a specific, clear context in which to address some broad issues and is, therefore, our focus in this monograph. 09.12.2005, gebundene Ausgabe.
2
9780387280028 - Lundstrom: Nanoscale Transistors: Device Physics, Modeling and Simulation
Symbolbild
Lundstrom

Nanoscale Transistors: Device Physics, Modeling and Simulation

Lieferung erfolgt aus/von: Vereinigte Staaten von Amerika EN PB US

ISBN: 9780387280028 bzw. 0387280022, in Englisch, Springer, Deutschland, Taschenbuch, gebraucht.

18,06 ($ 20,46)¹ + Versand: 3,52 ($ 3,99)¹ = 21,58 ($ 24,45)¹
unverbindlich
Lieferung aus: Vereinigte Staaten von Amerika, Versandkosten nach: USA.
Von Händler/Antiquariat, knkbooks.
Brand New Softcover International Edition, Have same content as US Edition. ISBN And Book cover may be different. Not a Used Book, Book Language:English. Printed in Black and White. Excellent customer service response.
3
9780387280028 - Lundstrom: Nanoscale Transistors: Device Physics, Modeling and Simulation
Symbolbild
Lundstrom

Nanoscale Transistors: Device Physics, Modeling and Simulation

Lieferung erfolgt aus/von: Vereinigte Staaten von Amerika EN PB

ISBN: 9780387280028 bzw. 0387280022, in Englisch, Springer, Deutschland, Taschenbuch.

18,04 ($ 20,43)¹ + Versand: 3,52 ($ 3,99)¹ = 21,56 ($ 24,42)¹
unverbindlich
Lieferung aus: Vereinigte Staaten von Amerika, Versandkosten nach: USA.
Von Händler/Antiquariat, INDEPENDENTSELLER.
Paperback. New. Brand New Softcover International Edition, Have same content as US Edition. ISBN is different. Never Used, in English Language. Printed in Black and White. 100% return and refund.
4
9780387280028 - Fremdsprachige Englische: Nanoscale Transistors: Device Physics, Modeling and Simulation
Fremdsprachige Englische

Nanoscale Transistors: Device Physics, Modeling and Simulation

Lieferung erfolgt aus/von: Schweiz EN NW

ISBN: 9780387280028 bzw. 0387280022, in Englisch, Springer, neu.

190,48 (Fr. 208,90)¹ + Versand: 16,41 (Fr. 18,00)¹ = 206,89 (Fr. 226,90)¹
unverbindlich
Lieferung aus: Schweiz, 09.12.2005.
The continuous scaling of transistors in the last half of century has been the driving force for electronics. The channel length of the transistors in production today is below 100nm. A wide variety of devices are also being explored to complement or even replace silicon transistors at molecular scales. Similarities between nanoscale and micronscale transistors exist, but nanotransistors also behave in drastically different ways. For example, ballistic transport and quantum effects become much, Silicon technology continues to progress, but device scaling is rapidly taking the metal oxide semiconductor field-effect transistor (MOSFET) to its limit. When MOS technology was developed in the 1960´s, channel lengths were about 10 micrometers, but researchers are now building transistors with channel lengths of less than 10 nanometers. New kinds of transistors and other devices are also being explored. Nanoscale MOSFET engineering continues, however, to be dominated by concepts and approaches originally developed to treat microscale devices. To push MOSFETs to their limits and to explore devices that may complement or even supplant them, a clear understanding of device physics at the nano/molecular scale will be essential. Our objective is to provide engineers and scientists with that understandin- not only of nano-devices, but also of the considerations that ultimately determine system performance. It is likely that nanoelectronics will involve much more than making smaller and different transistors, but nanoscale transistors provides a specific, clear context in which to address some broad issues and is, therefore, our focus in this monograph.
5
9780387280028 - Mark Lundstrom, Jing Guo: Nanoscale Transistors, Device Physics, Modeling and Simulation
Mark Lundstrom, Jing Guo

Nanoscale Transistors, Device Physics, Modeling and Simulation (2005)

Lieferung erfolgt aus/von: Niederlande EN HC NW

ISBN: 9780387280028 bzw. 0387280022, in Englisch, Springer-Verlag New York Inc. gebundenes Buch, neu.

145,99
unverbindlich
Lieferung aus: Niederlande, Vermoedelijk 4-6 weken.
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